K4H560838F-UCA2 Samsung Semiconductor, K4H560838F-UCA2 Datasheet - Page 13
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K4H560838F-UCA2
Manufacturer Part Number
K4H560838F-UCA2
Description
Manufacturer
Samsung Semiconductor
Type
DDR SDRAMr
Datasheet
1.K4H560838F-UCA2.pdf
(23 pages)
Specifications of K4H560838F-UCA2
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
140mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
DDR SDRAM 256Mb F-die (x8, x16) Pb-Free
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
AC Operating Conditions
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Parameter/Condition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.5V
0
Parameter
AC overshoot/Undershoot Definition
Area = 4.5V-ns
0.5
0.6875
VDD
1.0
Overshoot
1.5
2.0
2.5
3.0
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Tims(ns)
3.5
4.0
4.5
0.5*VDDQ-0.2
VREF + 0.31
5.0
Maximum Amplitude = 1.5V
5.5
Min
0.7
undershoot
GND
6.0
6.3125
6.5
0.5*VDDQ+0.2
7.0
VREF - 0.31
Rev. 1.2 October, 2004
VDDQ+0.6
Max-10
DDR333
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
DDR SDRAM
Specification
Unit
V
V
V
V
DDR200/266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2