MT47H32M16HR-37E:F Micron Technology Inc, MT47H32M16HR-37E:F Datasheet - Page 29
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MT47H32M16HR-37E:F
Manufacturer Part Number
MT47H32M16HR-37E:F
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-37EF.pdf
(132 pages)
Specifications of MT47H32M16HR-37E:F
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
205mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16HR-37E:F
Manufacturer:
MICRON
Quantity:
5 373
Table 11: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter/Condition
Operating burst write current: All
banks open, continuous burst writes;
BL = 4, CL = CL (I
(I
(I
tween valid commands; address bus
inputs are switching; Data bus inputs
are switching
Operating burst read current: All
banks open, continuous burst reads,
I
0;
t
CKE is HIGH, CS# is HIGH between val-
id commands; address bus inputs are
switching; Data bus inputs are switch-
ing
Burst refresh current:
(I
(I
HIGH between valid commands; Oth-
er control and address bus inputs are
switching; Data bus inputs are switch-
ing
Self refresh current: CK and CK# at
0V; CKE ≤ 0.2V; Other control and ad-
dress bus inputs are floating; Data
bus inputs are floating
Operating bank interleave read
current: All bank interleaving reads,
I
t
(I
(I
CS# is HIGH between valid commands;
address bus inputs are stable during
deselects; Data bus inputs are switch-
ing; See I
details
OUT
RAS =
OUT
RCD (I
DD
DD
DD
DD
DD
DD
t
CK =
),
); CKE is HIGH, CS# is HIGH be-
); refresh command at every
) interval; CKE is HIGH, CS# is
),
),
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
t
t
t
RAS =
RC =
RCD =
DD
t
RAS MAX (I
t
CK (I
) - 1 x
DD7
t
RC (I
t
t
Conditions (page 24) for
RAS MAX (I
DD
RCD (I
t
),
CK (I
DD
DD
), AL = 0;
),
DD
DD
DD
DD
t
RRD =
),
Notes:
); CKE is HIGH,
);
Specifications and Conditions (Die Revision G) (Continued)
t
RP =
t
t
DD
CK =
CK =
),
t
t
RRD
DD
DD
CK =
t
t
RP =
RP (I
t
t
1. I
2. V
3. I
4. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and
), AL =
), AL =
CK
CK
t
RFC
UDQS#. I
t
DD
t
DD
DD
CK
RP
DD
);
specifications are tested after the device is properly initialized. 0°C ≤ T
parameters are specified with ODT disabled.
= +1.8V ±0.1V, V
Symbol
I
I
I
DD4W
I
I
I
DD4R
DD6L
DD5
DD6
DD7
DD
values must be met with all combinations of EMR bits 10 and 11.
Configura-
x4, x8, x16
x4, x8
x4, x8
x4, x8
x4, x8
tion
x16
x16
x16
x16
DDQ
= +1.8V ±0.1V, V
29
Electrical Specifications – I
-187E
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
-25E/
DDL
125
160
120
150
100
150
215
-25
95
7
3
= +1.8V ±0.1V, V
-3E/-3
115
135
110
125
140
200
90
90
7
3
-37E
© 2004 Micron Technology, Inc. All rights reserved.
120
110
135
195
99
95
90
90
REF
7
3
= V
DD
DDQ
105
130
190
-5E
85
80
95
87
87
7
3
Parameters
/2.
C
≤ +85°C.
Units
mA
mA
mA
mA
mA