MT46H32M32LFCM-6 IT:A Micron Technology Inc, MT46H32M32LFCM-6 IT:A Datasheet - Page 63

• Manufacturer Part Number: MT46H32M32LFCM-6 IT:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-6 IT:A

• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 27: READ-to-WRITE
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQ
DQ
DQS
DQS
CK#
CK#
DM
DM
CK
CK
3,4
3,4
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
T0
T0
1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-
2. BST = BURST TERMINATE command; page remains open.
3. D
4. D
5. Shown with nominal
6. CKE = HIGH.
1
1
mand shown can be NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
CL = 2
BST
BST
T1
T1
2
2
CL = 3
T1n
D
t
AC,
OUT
NOP
n
T2
NOP
T2
t
63
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
OUT
n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
NOP
Bank,
Col b
T3
T3
t
DQSQ.
1
D
n + 1
t
(NOM)
OUT
DQSS
T3n
T3n
Don’t Care
WRITE
Bank,
Col b
T4
D
T4
NOP
b
IN
1
t
(NOM)
DQSS
T4n
T4n
b+1
D
IN
Transitioning Data
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READ Operation
D
T5
D
b+2
T5
NOP
NOP
b
IN
IN
b + 1
T5n
T5n
D
b+3
D
IN
IN