MT46H8M16LFBF-6 IT:K Micron Technology Inc, MT46H8M16LFBF-6 IT:K Datasheet - Page 82

• Manufacturer Part Number: MT46H8M16LFBF-6 IT:K
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFBF-6 IT:K

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Concurrent Auto Precharge
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
This device supports concurrent auto precharge such that when a READ with auto pre-
charge is enabled or a WRITE with auto precharge is enabled, any command to another
bank is supported, as long as that command does not interrupt the read or write data
transfer already in process. This feature enables the precharge to complete in the bank
in which the READ or WRITE with auto precharge was executed, without requiring an
explicit PRECHARGE command, thus freeing the command bus for operations in other
banks. During the access period of a READ or WRITE with auto precharge, only ACTIVE
and PRECHARGE commands can be issued to other banks. During the precharge peri-
od, ACTIVE, PRECHARGE, READ, and WRITE commands can be issued to other banks.
In either situation, all other related limitations apply (for example, contention between
READ data and WRITE data must be avoided).
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128Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Auto Precharge