MT47H32M16HR-25E IT:F Micron Technology Inc, MT47H32M16HR-25E IT:F Datasheet - Page 25

• Manufacturer Part Number: MT47H32M16HR-25E IT:F
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-25E IT:F

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Table 10: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter/Condition
Operating one bank active-precharge
current:
t
HIGH between valid commands; address bus
inputs are switching; Data bus inputs are
switching
Operating one bank active-read-pre-
charge current: I
(I
t
is HIGH, CS# is HIGH between valid com-
mands; address bus inputs are switching; Da-
ta pattern is same as I
Precharge power-down current: All banks
idle;
trol and address bus inputs are stable; Data
bus inputs are floating
Precharge quiet standby current: All
banks idle;
HIGH; Other control and address bus inputs
are stable; Data bus inputs are floating
Precharge standby current: All banks idle;
t
er control and address bus inputs are switch-
ing; Data bus inputs are switching
Active power-down current: All banks
open;
trol and address bus inputs are stable; Data
bus inputs are floating
Active standby current: All banks open;
t
t
valid commands; Other control and address
bus inputs are switching; Data bus inputs are
switching
Operating burst write current: All banks
open, continuous burst writes; BL = 4, CL =
CL (I
MAX (I
HIGH between valid commands; address bus
inputs are switching; Data bus inputs are
switching
RAS =
RAS =
CK =
CK =
RP (I
DD
), AL = 0;
DD
t
DD
CK =
t
t
t
CK (I
CK (I
), AL = 0;
DD
t
t
CK =
); CKE is HIGH, CS# is HIGH between
RAS MIN (I
RAS MIN (I
),
t
CK =
t
DD
DD
t
CK (I
t
RP =
CK =
t
CK (I
t
); CKE is HIGH, CS# is HIGH; Oth-
),
CK =
t
t
CK (I
RAS =
DD
t
CK =
t
t
DD
RP (I
CK (I
OUT
DD
DD
); CKE is LOW; Other con-
t
DD
CK (I
); CKE is LOW; Other con-
DD
); CKE is HIGH, CS# is
),
DD4W
DD
t
= 0mA; BL = 4, CL = CL
DD
t
t
CK (I
),
Specifications and Conditions (Die Revision F)
RAS MAX (I
RCD =
DD
); CKE is HIGH, CS# is
t
); CKE is HIGH, CS# is
RC =
),
DD
t
RC =
),
t
t
RCD (I
RC (I
t
RAS =
t
DD
RC (I
DD
DD
),
),
t
t
); CKE
RAS
DD
RP =
),
Symbol
I
I
I
I
I
I
I
DD3Pf
DD3Ps
DD4W
I
I
DD2Q
DD2N
DD3N
DD2P
DD0
DD1
Configuration
Slow PDN exit
Fast PDN exit
25
x4, x8, x16
MR12 = 0
MR12 = 1
Electrical Specifications – I
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
x16
x16
x16
x16
x16
x16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
-25E/
100
135
115
165
195
295
-25
50
65
55
70
40
12
70
75
7
-3E/-3
120
105
150
170
250
90
45
55
50
60
35
12
65
70
7
© 2004 Micron Technology, Inc. All rights reserved.
-37E
110
135
140
205
80
95
40
45
45
50
30
12
55
60
7
DD
Parameters
110
130
115
160
-5E
80
90
35
40
40
45
25
12
45
50
7
Units
mA
mA
mA
mA
mA
mA
mA
mA