MT46H64M16LFCK-6 IT:A Micron Technology Inc, MT46H64M16LFCK-6 IT:A Datasheet - Page 82

• Manufacturer Part Number: MT46H64M16LFCK-6 IT:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-6 IT:A

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 44: Bank Read – With Auto Precharge
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Case 1:
Case 2:
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
t
t
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
4,5
4,5
4
4
t
t
IS
IS
NOP
T0
t
DQSCK (MIN)
t
t
DQSCK (MAX)
1
t
IH
IH
Notes:
Bank x
ACTIVE
t
t
IS
IS
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. Refer to Figure 29 (page 65) and Figure 30 (page 66) for detailed DQS and DQ timing.
5. D
t
t
IH
IH
t
CK
these times.
OUT
t
t
RAS
RCD
t
RC
n = data-out from column n.
NOP
T2
1
t
CH
t
CL
t
t
Note 3
Bank x
READ
IS
LZ (MIN)
Col n
T3
t
2
IH
82
t
CL = 2
RPRE
t
t
LZ (MIN)
AC (MIN)
NOP
T4
1
1Gb: x16, x32 Mobile LPDDR SDRAM
t
AC (MAX)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
D
RPRE
OUT
n
t
DQSCK (MIN)
NOP
D
n + 1
T5
D
OUT
OUT
t
n
DQSCK (MAX)
1
T5n
D
D
OUT
n + 1
x
OUT
t
RP
NOP
D
x + 1
T6
t
OUT
D
RPST
OUT
x
1
Don’t Care
t
HZ (MAX)
© 2007 Micron Technology, Inc. All rights reserved.
T6n
D
x + 1
t
RPST
OUT
Auto Precharge
NOP
T7
1
Transitioning Data
ACTIVE
Bank x
Row
Row
T8