PF38F2030W0YTQ1 Micron Technology Inc, PF38F2030W0YTQ1 Datasheet - Page 39

• Manufacturer Part Number: PF38F2030W0YTQ1
• Manufacturer: Micron Technology Inc

Specifications of PF38F2030W0YTQ1

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

15.0
15.1
15.2
Table 1.
Figure 1.
Datasheet
Note:
1.
Symbol
t
t
SDR
RDR
t
RC
is defined in
Data Retention Set-up Time
Data Retention Recovery Time
SRAM Operations
Power-up Sequence and Initialization
The SRAM functionality and reliability are independent of the power-up sequence and power-up
slew rate of the core S-V
conditions. SRAM reliability is also independent of the power-down sequence and power-down
slew rate of the core S-V
Data Retention Mode
SRAM Data Retention Operation
SRAM Data Retention Operation Waveform—S-CS1# Controlled
Table 7.2, “SRAM AC Characteristics” on page
S-V
S-V
S-V
S-CS1#
Parameter
V
V
DR
SS
CC
IHmin
CCmin
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
CC
CC
. Any power-up sequence and power-up slew rate is possible under use
.
Min
t
t
RC
0
SDR
Intel® Wireless Flash Memory (W18/W30 SCSP)
Data Retention Mode
24.
Max
–
–
Unit
ns
ns
t
RDR
Notes
1
June 2005
39