5962-8671102XA National Semiconductor, 5962-8671102XA Datasheet
![no-image](/images/manufacturer_photos/0/4/469/national_semiconductor_sml.jpg)
5962-8671102XA
Specifications of 5962-8671102XA
Related parts for 5962-8671102XA
5962-8671102XA Summary of contents
Page 1
... IC so they can be manufactured and supplied to tight tolerances Features Low breakdown voltage 1 220V Y Schematic and Connection Diagrams Typical Applications Level Detector for Photodiode C 1995 National Semiconductor Corporation TL H 5713 Dynamic impedance from 500 Temperature stability typically 1% over b Y ...
Page 2
... Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 3) Power Dissipation (Note 1) Reverse Current Forward Current Electrical Characteristics (Note 2) Parameter Reverse Breakdown Voltage LM113 LM313 LM113-1 LM113-2 Reverse Breakdown Voltage ...
Page 3
Typical Performance Characteristics Reverse Characteristics Forward Characteristics Typical Applications (Continued) Amplifier Biasing for Constant Gain with Temperature (Continued) Reverse Dynamic Impedance Noise Voltage Response Time Maximum Shunt Capacitance Constant Current Source Thermometer Adjust for Adjust for ...
Page 4
... Hong Kong Ltd 49) 0-180-530 85 86 13th Floor Straight Block a Ocean Centre 5 Canton Rd 49) 0-180-530 85 85 Tsimshatsui Kowloon a Tel ( 49) 0-180-532 78 32 Hong Kong a 49) 0-180-532 93 58 Tel (852) 2737-1600 a Tel ( 49) 0-180-534 16 80 Fax (852) 2736-9960 a National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 ...