TSDF12830YS-GS08 Vishay, TSDF12830YS-GS08 Datasheet - Page 5

• Manufacturer Part Number: TSDF12830YS-GS08
• Manufacturer: Vishay

Specifications of TSDF12830YS-GS08

• Mounting: Surface Mount
• Pin Count: 6
• Lead Free Status / RoHS Status: Compliant

Amplifier 2
V
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Remark on improving intermodulation behavior:
By setting R
Document Number 85171
Rev. 1.2, 02-May-05
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Cross modulation
DS
= V
RG1
Parameter
G1
= 5 V, V
smaller than 100 kΩ, typical value of I
G2S
= 4 V, R
G1
G
G
f = 200 MHz
G
G
f = 400 MHz
G
G
f = 800 MHz
V
f = 800 MHz
G
f = 50 MHz
G
B
G
B
Input level for
k = 1 % @ 0 dB
AGC f
f
Input level for
k = 1 % @ 40 dB
AGC f
f
unw
unw
DS
S
S
= 100 kΩ, I
S
L
S
L
S
L
S
S
S
= 0.5 mS, B
= 1 mS, B
= 1 mS, B
= B
= B
= 2 mS, B
= 3.3 mS, B
= 3.3 mS, B
= G
= 2 mS, G
= 3.3 mS, G
= 60 MHz
= 60 MHz
= 5 V, V
w
w
Sopt
Sopt
L
= 50 MHz,
= 50 MHz,
= 20 mS, B
Test condition
, f = 400 MHz
, f = 800 MHz
G2S
D
L
L
S
L
= I
= B
= B
= B
L
S
S
= 0.5 mS,
L
= 0.5 to 4 V,
= B
DSO,
= B
= B
= 1 mS,
Lopt
Lopt
DSO
Sopt
S
Lopt
Sopt
Sopt
= B
,
,
f = 1 MHz, T
,
will raise and improved intermodulation behavior will be performed.
,
,
,
L
= 0,
amb
Symbol
C
|y
X
X
C
C
G
G
G
G
issg1
= 25 °C, unless otherwise specified
21s
mod
mod
oss
F
F
F
rss
ps
ps
ps
ps
|
Min
100
27
40
90
TSDF12830YS
Vishay Semiconductors
Typ.
105
1.7
0.9
5.0
1.0
1.3
31
20
33
30
25
50
Max
2.1
7.0
1.5
2.0
35
www.vishay.com
dBμV
dBμV
Unit
mS
pF
pF
dB
dB
dB
dB
dB
dB
dB
fF
5