STM8AF52AATCY STMicroelectronics, STM8AF52AATCY Datasheet - Page 86
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STM8AF52AATCY
Manufacturer Part Number
STM8AF52AATCY
Description
8 BITS MICROCONTR
Manufacturer
STMicroelectronics
Series
STM8Ar
Datasheet
1.STM8AF5289TCY.pdf
(106 pages)
Specifications of STM8AF52AATCY
Core Processor
STM8A
Core Size
8-Bit
Speed
24MHz
Connectivity
CAN, I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
80-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8AF52AATCY
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
86/106
Electromagnetic interference (EMI)
Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin
loading.
Table 47.
1. Data based on characterization results, not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 48.
1. Data based on characterization results, not tested in production
Symbol
V
V
V
Symbol
S
ESD(CDM)
ESD(HBM)
ESD(MM)
EMI
Peak level
SAE EMI level
Parameter
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Electrostatic discharge voltage
(charge device model)
EMI data
ESD absolute maximum ratings
Ratings
V
T
LQFP80 package
conforming to SAE
J 1752/3
A
DD
= 25 °C,
conditions
= 5 V,
General
Doc ID 14395 Rev 8
T
T
T
30 MHz to 130 MHz
0.1 MHz to 30 MHz
A
A
A
130 MHz to 1 GHz
frequency band
= 25 °C, conforming to
= 25 °C, conforming to
= 25 °C, conforming to
Monitored
JESD22-A114
JESD22-C101
JESD22-A115
Conditions
Conditions
—
STM8AF52/62xx, STM8AF51/61xx
MHz
15
18
-1
8
2
Class
Max f
3A
B
3
MHz
2.5
16
17
22
3
CPU
Maximum
value
(1)
4000
500
200
MHz
2.5
24
22
16
5
(1)
dBµV
Unit
Uni
V
t