SST39WF1601-90-4I-MBQE Microchip Technology, SST39WF1601-90-4I-MBQE Datasheet - Page 16
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SST39WF1601-90-4I-MBQE
Manufacturer Part Number
SST39WF1601-90-4I-MBQE
Description
1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 WFBGA 5x6x0.8 Mm TRAY
Manufacturer
Microchip Technology
Datasheet
1.SST39WF1601-90-4I-B3KE.pdf
(29 pages)
Specifications of SST39WF1601-90-4I-MBQE
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (1M x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-WFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST39WF1601-90-4I-MBQE
Manufacturer:
Microchip Technology
Quantity:
10 000
Company:
Part Number:
SST39WF1601-90-4I-MBQE-T
Manufacturer:
Microchip Technology
Quantity:
10 000
Data Sheet
©2008 Silicon Storage Technology, Inc.
FIGURE 8: Toggle Bits Timing Diagram
FIGURE 9: WE# Controlled Chip-Erase Timing Diagram
ADDRESS A
ADDRESS A
DQ
6
and DQ
DQ
Note: This device also supports CE# controlled Chip-Erase operation.
WE#
OE#
CE#
19-0
15-0
WE#
OE#
CE#
19-0
2
The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 15.)
WP# must be held in proper logic state (V
X can be V
5555
IL
XXAA
T
SW0
WP
or V
IH,
2AAA
T
but no other value.
OEH
XX55
SW1
T
SIX-BYTE CODE FOR CHIP-ERASE
CE
5555
XX80
SW2
T
OE
IH
5555
) 1 µs prior to and 1µs after the command sequence.
XXAA
SW3
16
2AAA
XX55
SW4
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
5555
XX10
SW5
WITH SAME OUTPUTS
TWO READ CYCLES
T
SCE
T
OES
S71297-04-000
1297 F07.1
1297 F08.1
12/08