SST39VF6401B-70-4I-B1KE Microchip Technology, SST39VF6401B-70-4I-B1KE Datasheet

SST39VF6401B-70-4I-B1KE

Manufacturer Part Number

SST39VF6401B-70-4I-B1KE

Description

2.7V To 3.6V 64Mbit Multi-Purpose Flash 48 TFBGA 8x10x1.2 Mm TRAY

Manufacturer

Microchip Technology

Datasheets

1.SST39VF010-70-4C-NHE.pdf (24 pages)

2.SST39VF6402B-70-4C-EKE.pdf (30 pages)

3.SST25VF512A-33-4I-QAE.pdf (12 pages)

Specifications of SST39VF6401B-70-4I-B1KE

Format - Memory

FLASH

Memory Type

FLASH

Memory Size

64M (4M x 16)

Speed

70ns

Interface

Parallel

Voltage - Supply

2.7 V ~ 3.6 V

Operating Temperature

-40°C ~ 85°C

Package / Case

48-TFBGA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

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Company:

BOSTOCK HK LIMITED

Part Number:

SST39VF6401B-70-4I-B1KE

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Microchip Technology

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10 000

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BOSTOCK HK LIMITED

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SST39VF6401B-70-4I-B1KE

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SST

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Meier Automation Equipment Co., Limited

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SST39VF6401B-70-4I-B1KE

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SST

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H&T Electronics

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SST39VF6401B-70-4I-B1KE

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117

Company:

BOSTOCK HK LIMITED

Part Number:

SST39VF6401B-70-4I-B1KE-T

Manufacturer:

Microchip Technology

Quantity:

10 000

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FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39LF512, SST39LF010, SST39LF020, SST39LF040

and SST39VF512, SST39VF010, SST39VF020, SST39VF040

are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Pur-

pose Flash (MPF) manufactured with SST’s proprietary, high per-

formance CMOS SuperFlash technology. The split-gate cell

design and thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches. The

SST39LF512/010/020/040 devices write (Program or Erase) with

a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices

write with a 2.7-3.6V power supply. The devices conform to

JEDEC standard pinouts for x8 memories.

Featuring

SST39LF512/010/020/040 and SST39VF512/010/020/

040 devices provide a maximum Byte-Program time of 20

µsec. These devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, they

are offered with a guaranteed typical endurance of

100,000 cycles. Data retention is rated at greater than 100

years.

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 devices are suited for applications that require

convenient and economical updating of program, configu-

S71150-14-000

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

– 3.0-3.6V for SST39LF512/010/020/040

– 2.7-3.6V for SST39VF512/010/020/040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

(typical values at 14 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 1 µA (typical)

– Uniform 4 KByte sectors

– 45 ns for SST39LF512/010/020/040

– 55 ns for SST39LF020/040

– 70 ns for SST39VF512/010/020/040

high

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories

performance

01/10

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

• All devices are RoHS compliant

ration, or data memory. For all system applications, they

significantly improves performance and reliability, while low-

ering power consumption. They inherently use less energy

during Erase and Program than alternative flash technolo-

gies. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program oper-

ation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF512/

010/020/040 and SST39VF512/010/020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

SST39LF/VF010 and SST39LF/VF020 are also offered in

a 48-ball TFBGA package. See Figures 2, 3, 4, and 5 for

pin assignments.

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 48-ball TFBGA (6mm x 8mm)

– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

1 second (typical) for SST39LF/VF512

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST39VF6401B-70-4I-B1KE

SST39VF6401B-70-4I-B1KE Summary of contents

Page 1

Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb ...

Page 2

Data Sheet Device Operation Commands are used to initiate the memory operation func- tions of the device. Commands are written to the device using standard microprocessor write sequences. A com- mand is written by asserting WE# low while keeping CE# ...

Page 3

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data# Polling ( When the SST39LF512/010/020/040 and SST39VF512/ 010/020/040 are in ...

Page 4

Data Sheet Memory Address Address Buffers & Latches CE# OE# WE# FIGURE 1: Functional Block Diagram SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 ...

Page 5

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 A11 A11 A11 A11 ...

Page 6

Data Sheet FIGURE 5: Pin Assignment for 34-ball WFBGA (4mm x 6mm) for 1 Mbit and 2 Mbit TABLE 2: Pin Description Symbol Pin Name Functions Address Inputs To provide memory ...

Page 7

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 TABLE 4: Software Command Sequence Command 1st Bus Sequence Write Cycle 1 Addr ...

Page 8

Data Sheet TABLE 5: DC Operating Characteristics -V SST39VF512/010/020/040 Symbol Parameter I Power Supply Current DD 2 Read 3 Program and Erase I Standby V Current Input Leakage Current LI I Output Leakage Current LO V Input ...

Page 9

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 AC CHARACTERISTICS TABLE 9: Read Cycle Timing Parameters - V SST39VF512/010/020/040 Symbol Parameter ...

Page 10

Data Sheet ADDRESS A MS-0 CE# OE WE# HIGH-Z DQ 7-0 Note Most significant address for SST39LF/VF512 for SST39LF/VF020 and A 17 FIGURE 6: Read Cycle Timing Diagram ...

Page 11

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 5555 ADDRESS CPH ...

Page 12

Data Sheet ADDRESS A MS-0 CE# OE# WE Note Most significant address FIGURE 10: Toggle Bit Timing Diagram 5555 2AAA ADDRESS A MS-0 CE# OE WE# ...

Page 13

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 5555 2AAA ADDRESS A MS-0 CE 7-0 ...

Page 14

Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET 5555 ADDRESS A 14 7-0 CE# OE WE# SW0 FIGURE 14: Software ID Exit and Reset V IHT INPUT V ILT AC test inputs are driven ...

Page 15

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 FIGURE 17: Byte-Program Algorithm ©2010 Silicon Storage Technology, Inc. Start Load data: AAH ...

Page 16

Data Sheet Internal Timer Byte-Program/ Erase Initiated Wait SCE Program/Erase Completed FIGURE 18: Wait Options ©2010 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash ...

Page 17

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Software ID Entry Command Sequence Load data: AAH Address: 5555H Load data: 55H ...

Page 18

Data Sheet Chip-Erase Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 10H Address: 5555H Wait T SCE Chip erased ...

Page 19

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 PRODUCT ORDERING INFORMATION SST 39 LF 040 - XXXX - ...

Page 20

Data Sheet Valid combinations for SST39LF512 SST39LF512-45-4C-NHE SST39LF512-45-4C-WHE Valid combinations for SST39VF512 SST39VF512-70-4C-NHE SST39VF512-70-4C-WHE SST39VF512-70-4I-NHE SST39VF512-70-4I-WHE Valid combinations for SST39LF010 SST39LF010-45-4C-NHE SST39LF010-45-4C-WHE Valid combinations for SST39VF010 SST39VF010-70-4C-NHE SST39VF010-70-4C-WHE SST39VF010-70-4I-NHE SST39VF010-70-4I-WHE Valid combinations for SST39LF020 SST39LF020-45-4C-NHE SST39LF020-45-4C-WHE SST39LF020-55-4C-NHE SST39LF020-55-4C-WHE Valid combinations ...

Page 21

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 PACKAGING DIAGRAMS TOP VIEW .495 .485 .453 Optional Pin #1 .447 .048 Identifier ...

Page 22

Data Sheet Pin # 1 Identifier 12.50 12.30 0.70 0.50 14.20 13.80 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0.1 ...

Page 23

Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 TOP VIEW 6.00 ± 0. ...

Page 24

Data Sheet TABLE 11: Revision History Number 01 • 2000 Data Book 02 • Changed speed from for the SST39LF020 and SST39LF040 03 • 2002 Data Book: Reintroduced the 45 ns parts for the SST39LF020 ...

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