SST39VF3202B-70-4I-EKE Microchip Technology, SST39VF3202B-70-4I-EKE Datasheet - Page 11

• Manufacturer Part Number: SST39VF3202B-70-4I-EKE
• Description: 2.7V To 3.6V 32Mbit Multi-Purpose Flash 48 TSOP 12x20 Mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST39VF3202B-70-4I-EKE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (2M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFSOP (0.472", 12.0mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Voltage on A
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
Operating Range
AC Conditions of Test
Power Up Specifications
All functionalities and DC specifications are specified for a V
in less than 300 ms). If the VDD ramp rate is slower than 1V per 100 ms, a hardware reset is required. The recom-
mended V
©2009 Silicon Storage Technology, Inc.
Range
Commercial
Industrial
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . C
See Figures 19 and 20
FIGURE 4: Power-Up Diagram
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
DD
9
power-up to RESET# high time should be greater than 100 µs to ensure a proper reset.
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Ambient Temp
-40°C to +85°C
0°C to +70°C
RESET#
1
V
CE#
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
L
= 30 pF
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
2.7-3.6V
2.7-3.6V
0V
V
DD
V
DD
min
T
PU-READ
11
DD
> 100 µs
ramp rate of greater than 1V per 100 ms (0V to 3V
V
IH
T
RHR
1384 F24.0
> 50ns
S71384-01-000
Data Sheet
DD
DD
+0.5V
+2.0V
1/09