SST39VF1601C-70-4C-B3KE-T Microchip Technology, SST39VF1601C-70-4C-B3KE-T Datasheet - Page 8

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SST39VF1601C-70-4C-B3KE-T

Manufacturer Part Number
SST39VF1601C-70-4C-B3KE-T
Description
2.7V To 3.6V 16Mbit Multi-Purpose Flash 48 TFBGA 6x8x1.2 Mm T/R
Manufacturer
Microchip Technology
Datasheet

Specifications of SST39VF1601C-70-4C-B3KE-T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST39VF1601C-70-4C-B3KE-T
Manufacturer:
Microchip Technology
Quantity:
10 000
Data Sheet
TABLE 4: Pin Description
©2010 Silicon Storage Technology, Inc.
Symbol
A
DQ
WP#
RST#
CE#
OE#
WE#
V
V
NC
RY/BY#
MS
DD
SS
1. A
15
1
-A
A
-DQ
MS
MS
0
= Most significant address
= A
0
19
Pin Name
Address Inputs
Data Input/output
Write Protect
Reset
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
Ready/Busy#
Functions
To provide memory addresses.
During Sector-Erase A
During Block-Erase A
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To protect the top/bottom boot block from Erase/Program operation when grounded.
To reset and return the device to Read mode.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide power supply voltage: 2.7-3.6V
Unconnected pins.
To output the status of a Program or Erase operation
RY/BY# is a open drain output, so a 10KΩ - 100KΩ pull-up resistor is required
to allow RY/BY# to transition high indicating the device is ready to read.
MS
MS
-A
-A
8
15
11
address lines will select the block.
address lines will select the sector.
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
S71380-04-000
T4.2 1380
05/10

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