PIC16LF724T-I/MV Microchip Technology, PIC16LF724T-I/MV Datasheet - Page 219
![7 KB Flash, 16 MHz Int. Osc, NanoWatt XLP 40 UQFN 5x5x0.5mm T/R](/photos/16/12/161286/qfn44_sml.jpg)
PIC16LF724T-I/MV
Manufacturer Part Number
PIC16LF724T-I/MV
Description
7 KB Flash, 16 MHz Int. Osc, NanoWatt XLP 40 UQFN 5x5x0.5mm T/R
Manufacturer
Microchip Technology
Series
PIC® XLP™ 16Fr
Datasheet
1.AC164112.pdf
(302 pages)
Specifications of PIC16LF724T-I/MV
Processor Series
PIC16F
Core
PIC
Program Memory Type
Flash
Program Memory Size
7 KB
Data Ram Size
192 B
Interface Type
I2C, SPI, AUSART
Number Of Timers
3
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
UQFN-40
Development Tools By Supplier
MPLAB IDE Software
Minimum Operating Temperature
- 40 C
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
36
Eeprom Size
-
Ram Size
192 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 14x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Lead Free Status / Rohs Status
Details
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23.4
© 2009 Microchip Technology Inc.
D130
D131
D132
D133
D134
D135
D135A
Legend:
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
Param
No.
*
†
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
4: Including OSC2 in CLKOUT mode.
DC Characteristics: PIC16F72X/PIC16LF72X-I/E (Continued)
E
V
I
I
T
T
These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
clock in RC mode.
normal operating conditions. Higher leakage current may be measured at different input voltages.
PPPGM
DDPGM
Sym.
PEW
RETD
P
PEW
TBD = To Be Determined
DC CHARACTERISTICS
Program Flash Memory
Cell Endurance
V
Voltage on MCLR/V
Erase/Program
V
V
Current on MCLR/V
Erase/Write
Current on V
Write
Erase/Write cycle time
Characteristic Retention
V
Charging current
Source/sink capability when
charging complete
DD
DD
DD
CAP
for Read
for Bulk Erase
for Write or Row Erase
Capacitor Charging
Characteristic
DD
during Erase/
PP
PP
during
during
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
Min.
100
8.0
2.7
2.7
40
—
—
—
—
—
MIN
PIC16F72X/PIC16LF72X
Typ†
200
0.0
1k
—
—
—
—
—
3
-40°C ≤ T
Max.
9.0
5.0
5.0
2.8
—
—
—
—
—
—
—
A
A
≤ +85°C for industrial
≤ +125°C for extended
Units
Year
E/W
mA
mA
mA
ms
μ
V
V
V
V
A
Temperature during programming:
10°C ≤ T
Temperature during programming:
10°C ≤ T
Temperature during programming:
10°C ≤ T
V
V
voltage
Temperature during programming:
10°C ≤ T
Temperature during programming:
10°C ≤ T
Temperature during programming:
10°C ≤ T
Provided no other specifications
are violated
MIN
MAX
= Minimum operating voltage
= Maximum operating
A
A
A
A
A
A
≤ 40°C
≤ 40°C
≤ 40°C
≤ 40°C
≤ 40°C
≤ 40°C
Conditions
DS41341E-page 219
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