NTMD5836NLR2G ON Semiconductor, NTMD5836NLR2G Datasheet - Page 6

• Manufacturer Part Number: NTMD5836NLR2G
• Description: NFET SO8-D 40V 10MO 25MO
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5836NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Details

0.001
2500
2000
1500
1000
1000
3000
0.01
500
100
100
0.1
10
10
0
1
0.1
0
1
V
SINGLE PULSE
T
Figure 7. Capacitance Variation − Channel 1
V
I
V
Figure 11. Maximum Rated Forward Biased
D
Variation vs. Gate Resistance − Channel 1
C
GS
DD
GS
= 10 A
= 25°C
t
C
= 20 V
d(off)
= 20 V
= 4.5 V
V
Figure 9. Resistive Switching Time
rss
Safe Operating Area − Channel 1
DS
DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
10
R
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (W)
DS(on)
1
LIMIT
t
f
20
10
C
C
iss
oss
TYPICAL PERFORMANCE CURVES
10
t
30
d(on)
T
V
J
GS
t
r
= 25°C
= 0 V
http://onsemi.com
100 ms
1 ms
dc
1 ms
10 ms
100
100
40
6
20
15
10
10
80
60
40
20
8
6
4
2
0
5
0
0
0.4
25
0
V
T
Figure 10. Diode Forward Voltage vs. Current
Drain−To−Source Voltage vs. Total Charge −
Q
J
GS
Starting Junction Temperature − Channel 1
Figure 12. Maximum Avalanche Energy vs.
T
GS
= 25°C
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
5
V
0.5
SD
Figure 8. Gate−To−Source and
50
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
10
G
Q
, TOTAL GATE CHARGE (nC)
GD
0.6
15
− Channel 1
Channel 1
75
Q
T
20
0.7
100
25
0.8
30
V
I
T
I
125
D
D
J
GS
= 10 A
0.9
= 25°C
= 39 A
= 20 V
35
150
40
1