MCP635T-E/UN Microchip Technology, MCP635T-E/UN Datasheet - Page 4

• Manufacturer Part Number: MCP635T-E/UN
• Description: Dual, 24MHz OP W /CS, E Temp 10 MSOP 3x3mm T/R
• Manufacturer: Microchip Technology

Specifications of MCP635T-E/UN

• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 10 V/µs
• Gain Bandwidth Product: 24MHz
• Current - Input Bias: 4pA
• Voltage - Input Offset: 1800µV
• Current - Supply: 2.5mA
• Current - Output / Channel: 70mA
• Voltage - Supply, Single/dual (±): 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP, Micro10™, 10-uMAX, 10-uSOP
• Number Of Channels: 2
• Voltage Gain Db: 124 dB
• Common Mode Rejection Ratio (min): 63 dB
• Input Offset Voltage: 8 mV
• Operating Supply Voltage: 3 V, 5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

MCP631/2/3/5
TABLE 1-2:
TABLE 1-3:
DS22197A-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Open Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus Noise
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, T
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
CS Internal Pull Down Resistor
Amplifier Output Leakage
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High-Z)
CS Low to Amplifier On Time
OUT
OUT
≈ V
≈ V
DD
DD
Parameters
/2, V
/2, V
Parameters
L
L
= V
= V
AC ELECTRICAL SPECIFICATIONS
DIGITAL ELECTRICAL SPECIFICATIONS
DD
DD
/2, R
/2, R
L
L
= 2 kΩ to V
= 2 kΩ to V
I
O(LEAK)
V
Sym
I
I
R
t
V
CSH
HYST
t
V
CSL
I
OFF
L
L
SS
ON
PD
, C
, C
IH
IL
L
L
THD+N
GBWP
R
Sym
= 50 pF and CS = V
= 50 pF and CS = V
PM
SR
E
e
OUT
i
0.8V
t
ni
r
ni
ni
V
Min
—
—
—
—
—
—
—
-2
SS
DD
Min
A
A
—
—
—
—
—
—
—
—
= +25°C, V
= +25°C, V
0.25
200
Typ
0.1
0.7
50
—
-1
5
2
0.0015
Typ
24
65
20
20
10
16
10
SS
SS
4
0.2V
Max
V
10
—
—
—
—
—
—
—
(refer to
(refer to
DD
DD
DD
DD
= +2.5V to +5.5V, V
= +2.5V to +5.5V, V
Max
—
—
—
—
—
—
—
—
—
Units
MΩ
µA
µA
Figure
Figure 1-1
nA
nA
ns
µs
V
V
V
nV/√Hz f = 1 MHz
fA/√Hz f = 1 kHz
Units
µV
MHz
V/µs
ns
%
Ω
CS = 0V
CS = V
CS = V
G = +1 V/V, V
CS = 0.8V
G = +1 V/V, V
CS = 0.2V
°
1-2).
P-P
and
G = +1
G = +1, V
V
G = +1, V
G = +1
f = 0.1 Hz to 10 Hz
DD
DD
DD
SS
SS
Figure
, T
DD
DD
= 5.5V, BW = 80 kHz
= GND, V
= GND, V
© 2009 Microchip Technology Inc.
A
to V
to V
L
L
= +125°C
= V
= V
OUT
OUT
1-2).
Conditions
OUT
OUT
SS
SS
Conditions
= 2V
= 100 mV
CM
CM
,
= 0.1(V
= 0.9(V
= V
= V
P-P
, f = 1 kHz,
DD
DD
DD
DD
P-P
/2,
/2,
/2)
/2)