MCP4812T-E/MS Microchip Technology, MCP4812T-E/MS Datasheet - Page 6

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MCP4812T-E/MS

Manufacturer Part Number
MCP4812T-E/MS
Description
Dual 10-bit DAC With SPI Interace And Internal Vref 8 MSOP 3x3mm T/R
Manufacturer
Microchip Technology
Datasheet

Specifications of MCP4812T-E/MS

Settling Time
4.5µs
Number Of Bits
10
Data Interface
Serial, SPI™
Number Of Converters
2
Voltage Supply Source
Single Supply
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP4812T-E/MS
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
MCP4812T-E/MS
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP4802/4812/4822
ELECTRICAL CHARACTERISTIC WITH EXTENDED TEMPERATURE (CONTINUED)
AC CHARACTERISTICS (SPI TIMING SPECIFICATIONS)
DS22249A-page 6
Electrical Specifications: Unless otherwise indicated, V
R
Output Amplifier
Output Swing
Phase Margin
Slew Rate
Short Circuit Current
Settling Time
Dynamic Performance (Note 2)
DAC-to-DAC Crosstalk
Major Code Transition
Glitch
Digital Feedthrough
Analog Crosstalk
Note 1:
Electrical Specifications: Unless otherwise indicated, V
Typical values are at +25°C.
Schmitt Trigger High-Level
Input Voltage
(All digital input pins)
Schmitt Trigger Low-Level
Input Voltage
(All digital input pins)
Hysteresis of Schmitt Trigger
Inputs
Input Leakage Current
Digital Pin Capacitance
(All inputs/outputs)
Clock Frequency
Clock High Time
Clock Low Time
CS Fall to First Rising CLK
Edge
Data Input Setup Time
Data Input Hold Time
SCK Rise to CS Rise Hold
Time
Note 1:
L
= 5 k to GND, C
2:
Parameters
Parameters
Guaranteed monotonic by design over all codes.
This parameter is ensured by design, and not 100% tested.
This parameter is ensured by design and not 100% tested.
L
= 100 pF. Typical values are at +125°C by characterization or simulation.
t
SETTLING
I
V
Sym
LEAKAGE
PM
SR
I
OUT
SC
C
t
V
F
Sym
CSSR
t
C
V
V
t
t
t
CHS
t
HYS
OUT
CLK
LO
SU
HD
HI
IN
IH
IL
,
0.7 V
Min
Min
15
15
40
15
10
15
-1
DD
DD
V
= 5V, V
DD
0.01 to
0.05 V
0.55
<10
<10
Typ
<10
4.5
66
17
45
– 0.04
DD
Typ
10
= 2.7V – 5.5V, T
SS
DD
= 0V, V
Max
0.2 V
Max
REF
20
1
DD
= 2.048V, Output Buffer Gain (G) = 2x,
Degree (°) C
A
Units
Units
V/µs
nV-s
nV-s
nV-s
nV-s
= -40 to +125°C.
MHz
mA
µs
A
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
LDAC = CS = SDI = SCK =
V
V
f
T
Note 1
Note 1
Applies only when CS falls with
CLK high. (Note 1)
Note 1
Note 1
Note 1
CLK
A
DD
DD
Accuracy is better than 1 LSb
for
V
40 mV)
Within 1/2 LSb of final value
from 1/4 to 3/4 full-scale range
1 LSb change around major
carry (0111...1111 to
1000...0000)
 2010 Microchip Technology Inc.
= +25°C (Note 1)
OUT
L
or V
= 5.0V, T
= 1 MHz (Note 1)
= 400 pF, R
= 10 mV to (V
SS
Conditions
Conditions
A
= +25°C,
L
= 
DD

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