MCP14E5T-E/MF Microchip Technology, MCP14E5T-E/MF Datasheet - Page 5

• Manufacturer Part Number: MCP14E5T-E/MF
• Description: IC,Dual MOSFET Driver,CMOS,LLCC,8PIN,PLASTIC
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of MCP14E5T-E/MF

• Configuration: Low-Side
• Input Type: Inverting and Non-Inverting
• Delay Time: 46ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-DFN
• Rise Time: 30 ns
• Fall Time: 30 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 2 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MCP14E5T-E/MFTR

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
© 2008 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
Propagation Delay Time
Propagation Delay Time
Power Supply
Supply Voltage
Supply Current
Note 1:
Parameters
Switching times ensured by design.
V
V
V
I
Sym
V
R
ENBL
V
V
R
V
EN_H
HYST
I
I
I
I
I
I
I
I
V
t
t
EN_L
t
t
I
t
DD
DD
DD
DD
DD
DD
DD
DD
t
D1
D2
D3
D4
IN
OH
OH
DD
OL
OL
R
F
IH
IL
V
MCP14E3/MCP14E4/MCP14E5
DD
1.60
1.30
Min
–10
2.4
4.5
– 0.025
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.20
1.80
0.40
Typ
3.0
3.0
2.0
0.8
1.5
1.5
1.8
0.6
1.1
1.1
25
28
50
50
87
50
60
—
—
—
—
—
—
0.025
Max
2.90
2.40
18.0
+10
115
0.8
6.0
5.0
3.0
1.1
2.0
2.0
2.8
0.8
1.8
1.8
—
—
40
40
70
70
—
—
—
Units
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
ns
ns
ns
ns
ns
ns
V
V
V
V
Ω
Ω
V
V
V
V
0V ≤ V
DC TEST
DC TEST
I
I
Figure
C
Figure
C
Figure
Figure
V
V
V
Figure 4-3
Figure 4-3
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
OUT
OUT
DD
DD
DD
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
L
L
= 2200 pF
= 2200 pF
= 12V, LO to HI Transition
= 12V, HI to LO Transition
= 12V, ENB_A = ENB_B = GND
= 10 mA, V
= 10 mA, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
IN
4-1,
4-1,
4-1,
4-1,
≤ V
Figure 4-2
Figure 4-2
Figure 4-2
Figure 4-2
DD
Conditions
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
DD
DD
= 3V,
= 0V,
= 0V,
= 3V,
= 3V,
= 0V,
= 0V,
= 3V,
DD
= 18V
= 18V
DS22062B-page 5
≤ 18V.