DPBT8105-7 Diodes Zetex, DPBT8105-7 Datasheet - Page 2

• Manufacturer Part Number: DPBT8105-7
• Description: Trans GP BJT PNP 60V 1A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of DPBT8105-7

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 100@1mA@5V|100@500mA@5V|80@1A@5V|30@2A@5V
• Maximum Operating Frequency: 150(Min) MHz
• Maximum Dc Collector Current: 1 A
• Maximum Base Emitter Saturation Voltage: 1.2@100mA@1A V
• Maximum Collector Emitter Saturation Voltage: 0.3@50mA@500mA|0.6@100mA@1A V
• Maximum Collector Base Voltage: 80 V
• Maximum Collector Emitter Voltage: 60 V
• Maximum Emitter Base Voltage: 5 V

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
DS30514 Rev. 8 - 2
800
700
600
500
400
300
200
100
-1.4
-0.8
-0.6
-0.4
-0.2
-1.2
Fig. 3,
-1
0
Fig. 1, Max Power Dissipation vs. Ambient Temperature
0
5. Short duration pulse test used to minimize self-heating effect.
-1
0
Base-Emitter Saturation Voltage vs. Collector Current
25
T , AMBIENT TEMPERATURE (°C)
A
I , COLLECTOR CURRENT (mA)
C
-10
50
Characteristic
75
-100
100 125
@T
A
-1,000
= 25°C unless otherwise specified
Note 1
150
175
-10,000
200
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V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
I
h
CBO
CES
EBO
f
FE
obo
T
2 of 4
Fig. 4, Collector-Emitter Saturation Voltage vs. Collector Current
Min
100
100
150
-80
-60
80
30
-300
-100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-350
-250
-200
-150
-5
400
350
250
200
150
100
300
-50
50
0
0
-1
-1
Fig. 2, DC Current Gain vs. Collector Current
Max
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
300
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
-10
MHz
Unit
nA
nA
nA
pF
V
V
V
V
V
V
V
-10
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
V
C
C
E
C
C
C
C
C
C
C
C
CB
CES
EB
CB
CE
= -100μA, I
= -1A, I
= -1A, I
= -100μA, I
= -10mA, I
= -1mA, V
= -500mA, V
= -1A, V
= -2A, V
= -500mA, I
= -1A, V
-100
= -4V, I
= -60V, I
= -10V, f = 1.0MHz
= -10V, I
= -60V
B
B
CE
CE
CE
= -100mA
= -100mA
-100
C
Test Condition
CE
B
E
C
= 0
E
C
= -5V
= -5V
= -5V
B
-1,000
= 0
= 0
= -50mA, f = 100MHz
CE
= 0
= 0
= -5V
= -50mA
= -5V
© Diodes Incorporated
-10,000
-1,000
DPBT8105