BFR182E6327XT Infineon Technologies, BFR182E6327XT Datasheet
BFR182E6327XT
Specifications of BFR182E6327XT
Related parts for BFR182E6327XT
BFR182E6327XT Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain broadband amplifiers at collector currents from GHz 0 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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... ITF = 1.0132 V VJC = 1.7541 MJS = 3 - XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit Transistor B’ For examples and ready to use parameters please contact your local Infineon Technologies ...
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Total power dissipation P 300 mW 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 1 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...