BCX6925TA Diodes Zetex, BCX6925TA Datasheet

Trans GP BJT PNP 20V 1A 4-Pin (3+Tab) SOT-89 T/R

BCX6925TA

Manufacturer Part Number

BCX6925TA

Description

Trans GP BJT PNP 20V 1A 4-Pin (3+Tab) SOT-89 T/R

Manufacturer

Diodes Zetex

Type

PNPr

Datasheet

1.BCX6925TA.pdf (1 pages)

Specifications of BCX6925TA

Package

4SOT-89

Supplier Package

SOT-89

Pin Count

4

Minimum Dc Current Gain

160@500mA@1V

Maximum Operating Frequency

100(Min) MHz

Maximum Dc Collector Current

1 A

Maximum Collector Emitter Saturation Voltage

0.5@100mA@1A V

Maximum Collector Base Voltage

25 V

Maximum Collector Emitter Voltage

20 V

Maximum Emitter Base Voltage

5 V

Transistor Type

PNP

Current - Collector (ic) (max)

1A

Voltage - Collector Emitter Breakdown (max)

20V

Vce Saturation (max) @ Ib, Ic

500mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

160 @ 500mA, 1V

Power - Max

1W

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

-

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BCX6925TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

BCX6925TA

Manufacturer:

Diodes/Zetex

Quantity:

1 904

Current page: 1 of 1
Download datasheet (17Kb)

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 2 – FEBRUARY 1995

FEATURES

*

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

For typical characteristics graphs see FMMT549 datasheet.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

High gain and low saturation voltages

amb

=25°C

SYMBOL MIN.

V

V

V

I

I

V

V

h

BCX69-16

BCX69-25

f

C

CBO

EBO

T

FE

(BR)CBO

(BR)CEO

(BR)EBO

CE(sat)

BE(on)

obo

BCX68

BCX69

BCX69-16 – CG

BCX69-25 – CH

-25

-20

-5

50

85

60

100

160

100

– CJ

3 - 37

amb

TYP.

250

SYMBOL

V

V

V

I

I

P

T

CM

C

tot

j

CBO

CEO

EBO

:T

= 25°C unless otherwise stated).

stg

MAX. UNIT CONDITIONS.

-0.1

-10

-10

-0.5

-1.0

375

250

400

25

V

V

V

V

MHz

pF

V

A

A

A

IC =-100 A

IC =-10mA

I

V

V

V

I

I

I

I

I

I

I

I

f=100MHz

V

-65 to +150

E

C

C

C

C

C

C

C

C

CB

CB

EB

CB

VALUE

=-100 A

=-1A, I

=-1A, V

=-5mA, V

=-500mA, V

=-1A, V

=-500mA, V

=-500mA, V

=-100mA, V

-25

-20

=-25V

=-25V, T

=-5V

=-10V, f=1MHz

-5

-2

-1

1

BCX69

C

B

CE

CE

=-100mA

CE

=-1V

=-1V*

amb

SOT89

B

CE

CE

CE

CE

=-1V

=150°C

=-1V

=-1V*

=-1V

=-5V,

C

UNIT

W

°C

V

V

V

A

A

E

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