BC857BW-7-F Diodes Zetex, BC857BW-7-F Datasheet - Page 2

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BC857BW-7-F

Manufacturer Part Number
BC857BW-7-F
Description
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-323 T/R
Manufacturer
Diodes Zetex
Type
PNPr
Datasheet

Specifications of BC857BW-7-F

Package
3SOT-323
Supplier Package
SOT-323
Pin Count
3
Minimum Dc Current Gain
220@2mA@5V
Maximum Operating Frequency
200(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.95@5mA@100mA V
Maximum Collector Emitter Saturation Voltage
0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC857BW-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
Collector-Base Breakdown Voltage (Note 6)
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage (Note 6)
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Voltage (Note 6)
Collector-Cutoff Current (Note 6)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS30251 Rev. 8 - 2
100
250
200
150
50
6. Short duration pulse test used to minimize self-heating effect.
0
0
25
T , AMBIENT TEMPERATURE (°C)
Characteristic
A
Fig. 1, Max Power Dissipation vs.
50
Ambient Temperature
Current Gain Group
75
100 125
@T
A
= 25°C unless otherwise specified
150
BC856
BC856
BC857
BC858
BC857
BC858
175
A
B
C
V
V
V
200
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
C
BE(SAT)
BE(ON)
I
I
h
CBO
CBO
NF
CBO
www.diodes.com
f
FE
T
2 of 3
-600
Min
125
220
420
100
-80
-50
-30
-65
-45
-30
-5
-250
-700
-850
-650
Typ
180
290
520
200
-75
0.5
0.4
0.3
0.2
0.1
3
0
0.1
I
I
Fig. 2 Collector Emitter Saturation Voltage
C
B
Max
-300
-650
-950
-750
-820
250
475
800
-4.0
-15
4.5
10
= 10
I , COLLECTOR CURRENT (mA)
C
1
T = 150°C
A
MHz
Unit
mV
mV
mV
nA
µA
dB
vs. Collector Current
pF
V
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
V
R
Δf = 200Hz
C
C
E
C
C
C
C
T = 25°C
CE
CE
CE
CB
CB
CE
CB
CE
S
= 1μA, I
10
= 10μA, I
= 10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
A
= 2kΩ, f = 1kHz,
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
= -5.0V, I
C
Test Condition
B
= 0
B
B
B
= 0
C
C
C
C
C
A
= 0
B
B
BC856AW - BC858CW
100
= -0.5mA
= -0.5mA
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA,
= 200µA,
= -5.0mA
= -5.0mA
T = -50°C
A
© Diodes Incorporated
1,000

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