FMMT734TA Diodes Zetex, FMMT734TA Datasheet - Page 2

• Manufacturer Part Number: FMMT734TA
• Description: Trans Darlington PNP 100V 0.8A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of FMMT734TA

• Package: 3SOT-23
• Configuration: Single
• Peak Dc Collector Current: 0.8 A
• Maximum Base Emitter Saturation Voltage: 1.75@5mA@1A V
• Maximum Collector Emitter Saturation Voltage: 0.75@1mA@100mA|0.8@1mA@250mA|0.86@5mA@500mA|0.97@5mA@800mA|1.05@5mA@1A V
• Maximum Collector Cut-off Current: 0.01 uA
• Maximum Collector Emitter Voltage: 100 V
• Minimum Dc Current Gain: 20000@100mA@5V|15000@1A@5V|5000@2A@5V
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.05V @ 5mA, 1A
• Current - Collector Cutoff (max): 200nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage(max): 100V
• Emitter-base Voltage (max): 12V
• Base-emitter Saturation Voltage (max): 1.75@5mA@1A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FMMT734TR; UFMMT734TA; UFMMT734TR; UFMMT734TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
† T
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time
Turn-Off Time
FMMT734
amb
=150°C
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
-100
-100
-12
20K
15K
5K
amb
TYP.
-130
-116
-17
-0.68
-0.72
-0.78
-0.86
-0.72
-0.90
-1.60
-1.30
60K
60K
50K
15K
150
20K
140
14
460
1200
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
-10
-10
-200
-0.75
-0.80
-0.86
-0.97
—
-1.05
-1.75
-1.75
25
V
V
V
nA
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
ns
ns
2%
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B
CB
EB
CES
CB
=-100 A
=-100 A
=-5mA*
=-100mA, I
=-250mA,I
=-500mA, I
=-800mA, I
=-800mA, I
=-1A, I
=-1A, I
=-10mA, V
=-100mA, V
=-1A, V
=-2A, V
=-5A, V
=-1A, V
=-10mA, V
=-500mA, V
= 1mA
=-1A, V
=-7V
=-80V
=-10V, f=1MHz
=-80V
B
B
CE
CE
CE
CE
CE
=-5mA*
=-5mA*
=-5V*
=-5V*
=-5V*
=-2V*
=-5V*
B
CE
CE
B
B
B
B
=-1mA*
CE
CC
=-1mA*
=-5mA*
=-5mA*
=-5mA
=-5V*
=-10V
=-5V*
=-20V
†*