BCV49TA Diodes Zetex, BCV49TA Datasheet
![Trans Darlington NPN 60V 0.5A 4-Pin (3+Tab) SOT-89 T/R](/photos/5/67/56785/bcv49ta_sml.jpg)
BCV49TA
Manufacturer Part Number
BCV49TA
Description
Trans Darlington NPN 60V 0.5A 4-Pin (3+Tab) SOT-89 T/R
Manufacturer
Diodes Zetex
Type
NPNr
Datasheet
1.BCV49TA.pdf
(1 pages)
Specifications of BCV49TA
Package
4SOT-89
Configuration
Single
Peak Dc Collector Current
0.5 A
Maximum Base Emitter Saturation Voltage
1.5@0.1mA@100mA V
Maximum Collector Emitter Saturation Voltage
1@0.1mA@100mA V
Maximum Collector Base Voltage
80 V
Maximum Collector Cut-off Current
0.1 uA
Maximum Collector Emitter Voltage
60 V
Minimum Dc Current Gain
2000@0.1mA@1V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
170MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCV49TA
BCV49TR
BCV49TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE –
PARTMARKING DETAILS –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
For typical graphs see FMMT38A datasheet
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature
Range
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
amb
SYMBOL
V
V
V
I
V
V
h
f
C
CBO
EBO
T
=25°C
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
obo
BCV48
EG
MIN.
80
60
10
2000
4000
10000
2000
† Periodic Sample Test Only.
3 - 26
amb
SYMBOL
V
V
V
I
I
P
T
TYP.
170
3.5
CM
C
tot
j
CBO
CEO
EBO
:T
stg
= 25°C unless otherwise stated).
MAX.
100
10
100
1
1.5
UNIT
V
V
V
nA
nA
V
V
MHz
pF
A
-65 to +150
VALUE
800
500
80
60
10
1
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
f = 20MHz
V
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
=10 A
=100 A
=10mA*
=100mA, I
=100mA, I
=100 A, V
=10mA, V
=100mA, V
=500mA, V
=50mA, V
=4V
=60V
=60V, T
=10V, f=1MHz
BCV49
C
SOT89
B
amb
CE
CE
B
B
CE
CE
CE
=0.1mA*
=0.1mA*
=5V*
=5V
=1V†
=150°C
UNIT
=5V*
=5V*
C
mA
mA
W
°C
V
V
V
E