BCV49TA Diodes Zetex, BCV49TA Datasheet

Trans Darlington NPN 60V 0.5A 4-Pin (3+Tab) SOT-89 T/R

BCV49TA

Manufacturer Part Number

BCV49TA

Description

Trans Darlington NPN 60V 0.5A 4-Pin (3+Tab) SOT-89 T/R

Manufacturer

Diodes Zetex

Type

NPNr

Datasheet

1.BCV49TA.pdf (1 pages)

Specifications of BCV49TA

Package

4SOT-89

Configuration

Single

Peak Dc Collector Current

0.5 A

Maximum Base Emitter Saturation Voltage

1.5@0.1mA@100mA V

Maximum Collector Emitter Saturation Voltage

1@0.1mA@100mA V

Maximum Collector Base Voltage

80 V

Maximum Collector Cut-off Current

0.1 uA

Maximum Collector Emitter Voltage

60 V

Minimum Dc Current Gain

2000@0.1mA@1V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V

Transistor Type

NPN - Darlington

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

1V @ 100µA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

Frequency - Transition

170MHz

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BCV49TA
BCV49TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

BCV49TA

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Download datasheet (22Kb)

SOT89 NPN SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 3 – SEPTEMBER 1995

COMPLEMENTARY TYPE –

PARTMARKING DETAILS –

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

For typical graphs see FMMT38A datasheet

Spice parameter data is available upon request for this device

PARAMETER

Collector-Base Voltage

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

Operating and Storage Temperature

Range

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current I

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

amb

SYMBOL

CBO

EBO

=25°C

(BR)CBO

(BR)CEO

(BR)EBO

CE(sat)

BE(sat)

obo

BCV48

MIN.

2000

4000

10000

2000

† Periodic Sample Test Only.

3 - 26

amb

SYMBOL

TYP.

170

3.5

tot

CBO

CEO

EBO

stg

= 25°C unless otherwise stated).

MAX.

100

1.5

UNIT

MHz

-65 to +150

VALUE

800

500

CONDITIONS.

f = 20MHz

=10 A

=100 A

=10mA*

=100mA, I

=100 A, V

=10mA, V

=100mA, V

=500mA, V

=50mA, V

=4V

=60V

=60V, T

=10V, f=1MHz

BCV49

SOT89

amb

=0.1mA*

=5V*

=5V

=1V†

=150°C

UNIT

=5V*

°C

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