AM79C203JC AMD (ADVANCED MICRO DEVICES), AM79C203JC Datasheet - Page 16
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AM79C203JC
Manufacturer Part Number
AM79C203JC
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet
1.AM79C203JC.pdf
(40 pages)
Specifications of AM79C203JC
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM79C203JC
Manufacturer:
AMD
Quantity:
20 000
ABSOLUTE MAXIMUM ELECTRICAL AND THERMAL RATINGS
ASLIC Device
Storage temperature...................–55°C
Ambient temperature,
Ambient relative humidity
V
V
V
BGND with respect to
Voltage on relay outputs....................................... +7 V
AD or BD to BGND:
Current into SA or SB: 10 µs rise to Ipeak;
Current into SA or SB: 2 µs rise to Ipeak;
Current through AD or BD ............................. ±150 mA
C5–C1
Maximum power dissipation, T
Note: Thermal limiting circuitry on chip will shut down the
circuit at a junction temperature of about 160°C. The device
should never be exposed to this temperature. Operation
above 145°C junction temperature may degrade device
reliability. See the SLIC Packaging Considerations for more
information.
ASLAC Device
Storage temperature...................–60°C
Ambient temperature,
Ambient relative humidity
V
V
V
AGND .....................................................DGND ±0.4 V
Latch up immunity (any pin) .......................... ±100 mA
Any other pin with respect
Stresses above those listed under Absolute Maximum Ratings
may cause permanent device failure. Functionality at or above
these limits is not implied. Exposure to Absolute Maximum
Ratings for extended periods may affect device reliability.
16
CC
BAT
CC
CCA
CCA
IN
under bias................................–40°C
(noncondensing).................................. 5% to 100%
AGND/DGND ................................–0.5 V to +0.5 V
Continuous ........................................–75 V to +1 V
10 ms (f = 0.1 Hz).............................. –75 V to +5 V
1 µs (f = 0.1 Hz)...............................–90 V to +10 V
250 ns (f = 0.1 Hz).........................–120 V to +15 V
1000 µs fall to 0.5 Ipeak;
2000 µs fall to I = 0.......................... Ipeak = ±5 mA
10 µs fall to 0.5 Ipeak;
20 µs fall to I = 0 ......................... Ipeak = ±12.5 mA
to DGND or AGND ............... –0.4 V to V
under bias................................–40°C
(noncondensing).................................. 5% to 100%
to DGND............................... –0.4 V to V
with respect to DGND ....... –0.4 V to V
with respect to AGND/DGND......... –0.4 V to +7 V
with respect to V
, Q
, V
with respect to V
BAT
CCD
with respect to BGND....... +0.4 V to –75 V
with respect to DGND........ –0.4 V to +6 V
BAT
CCD
, Q
................................ ±0.4 V
BAT
A
......................... +80 V
= 70°C ........... 1.67 W
Am79213/Am79C203/031 Data Sheet
T
T
CCA
T
T
A
A
CC
CC
P R E L I M I N A R Y
A
A
+150°C
+125°C
+ 0.4 V
+ 0.4 V
+ 0.4 V
+85°C
+85°C
OPERATING RANGES
Environmental
Ambient temperature .........0°C to +70°C Commercial*
Ambient relative humidity.......................... 15% to 85%
ASLIC Device
V
V
BGND with respect to GND ....... –100 mV to +100 mV
Load resistance on V
ASLAC Device
Supplies V
DGND ..................................................................... 0 V
AGND.................................................. DGND ± 50 mV
Operating ranges define those limits over which the
functionality of the device is guaranteed by production
testing.
* Functionality of the device from 0°C to +70°C is guaranteed
by production testing. Performance from –40°C to +85°C is
guaranteed by characterization and periodic sampling of
production units.
CC
BAT
..............................................................+5 V ± 5%
, Q
BAT
CCA
............................................–18 V to –70 V
, V
CCD
TX
...................................+5 V ± 5%
to ground ............... 10 k
min