NTMFS4825NFET1G ON Semiconductor, NTMFS4825NFET1G Datasheet

NTMFS4825NFET1G

Manufacturer Part Number

NTMFS4825NFET1G

Description

MOSFET N-CH 30V 171A SO-8FL

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMFS4825NFET3G.pdf (6 pages)

Specifications of NTMFS4825NFET1G

Input Capacitance (ciss) @ Vds

5660pF @ 15V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2 mOhm @ 22A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

40.2nC @ 4.5V

Power - Max

950mW

Mounting Type

Package / Case

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.3 mOhms

Forward Transconductance Gfs (max / Min)

90 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

29 A

Power Dissipation

2.74 W

Maximum Operating Temperature

+ 85 C

Mounting Style

SMD/SMT

Fall Time

13 ns

Gate Charge Qg

40.2 nC

Rise Time

24 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS4825NFET1G

Manufacturer:

ON Semiconductor

Quantity:

195

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMFS4825NFET1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (110Kb)

NTMFS4825NFE

Power MOSFET

30 V, 171 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

December, 2010 − Rev. 0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

10 sec

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current limited by package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (V

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Low R

Low Capacitance to Minimize Driver Losses

Includes Schottky Diode

Optimized Gate Charge to Minimize Switching Losses

Dual Sided Cooling Capability

These are Pb−Free Device

CPU Power Delivery

DC−DC Converters

Low Side Switching

qJA

qJA,

qJA

qJC

= 50 A

(Note 1)

(Note 2)

(Note 1)

t v 10 sec

DS(on)

qJA

qJC

, L = 0.3 mH, R

= 50 V, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 10 V,

= 25 W)

= 25°C unless otherwise stated)

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

Dmaxpkg

dV/dt

EAS

DSS

STG

−40 to

Value

+150

2.74

0.95

96.2

±20

171

123

288

100

120

375

260

7.3

Unit

V/ns

°C

*For additional information on our Pb−Free strategy

†For information on tape and reel specifications,

NTMFS4825NFET1G

NTMFS4825NFET3G

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SO−8 FLAT LEAD

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 488AA

(BR)DSS

(Note: Microdot may be in either location)

30 V

STYLE 1

Device

ORDERING INFORMATION

N−CHANNEL MOSFET

http://onsemi.com

3.0 mW @ 4.5 V

2.0 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package

DS(ON)

(Pb−Free)

Publication Order Number:

Package

SO−8FL

MAX

NTMFS4825NFE/D

MARKING

DIAGRAM

825NFE

AYWWG

Tape & Reel

Shipping

1500 /

5000 /

171 A

140 A

MAX

†

Related parts for NTMFS4825NFET1G

NTMFS4825NFET1G Summary of contents

Page 1

... Microdot may be in either location 288 100 A Dmaxpkg T , −40 to °C NTMFS4825NFET1G J T +150 STG I 120 A S NTMFS4825NFET3G dV/dt 6 V/ns EAS 375 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec Junction−to−Top 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

V thru 10 V 260 240 T = 25°C 220 J 200 180 160 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.010 ...

Page 5

V GS 7000 6000 5000 4000 3000 2000 C 1000 rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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