NTMS5838NLR2G ON Semiconductor, NTMS5838NLR2G Datasheet

NTMS5838NLR2G

Manufacturer Part Number

NTMS5838NLR2G

Description

MOSFET N-CH 40V 7.5A 8SOIC

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMS5838NLR2G.pdf (6 pages)

Specifications of NTMS5838NLR2G

Input Capacitance (ciss) @ Vds

785pF @ 20V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

25 mOhm @ 7A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

5.8A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 10V

Power - Max

1.5W

Mounting Type

Package / Case

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

20.5 mOhms

Forward Transconductance Gfs (max / Min)

4 S

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

5.8 A

Power Dissipation

1.5 W

Maximum Operating Temperature

+ 85 C

Mounting Style

SMD/SMT

Fall Time

4 ns

Gate Charge Qg

17 nC

Rise Time

23 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMS5838NLR2G

Manufacturer:

Quantity:

12 000

Current page: 1 of 6
Download datasheet (110Kb)

NTMS5838NL

Power MOSFET

40 V, 7.5 A, 25 mW

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad

2. Surface−mounted on FR4 board using 0.155 in sq (100mm

April, 2011 − Rev. 1

MAXIMUM RATINGS

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (V

L = 0.1 mH)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Ambient Steady State (Note 1)

Junction−to−Ambient − t ≤10 s (Note 1)

Junction−to−Foot (Drain) (Note 1)

Junction−to−Ambient Steady State (Note 2)

Compliant

Low R

Low Capacitance

Optimized Gate Charge

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Cu area = 1.127 in sq [2 oz] including traces).

qJA

(Note 1)

DS(on)

qJA

= 40 V, V

Parameter

Steady

t ≤10 s

State

= 10 V,

= 25°C unless otherwise stated)

= 10 ms

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

Symbol

EAS

, T

IAS

qJA

qJF

qJA

DSS

STG

Value

−55 to

Value

123

+150

) pad size.

±20

260

5.8

4.6

1.5

1.0

7.5

6.0

2.6

1.6

7.5

°C/W

Unit

°C

†For information on tape and reel specifications,

NTMS5838NLR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 751

STYLE 12

(BR)DSS

(*Note: Microdot may be in either location)

40 V

SO−8

Device

ORDERING INFORMATION

N−CHANNEL MOSFET

http://onsemi.com

30.8 mW @ 4.5 V

25 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package*

DS(ON)

Source

(Pb−Free)

Package

MARKING DIAGRAM/

Gate

SO−8

PIN ASSIGNMENT

Publication Order Number:

MAX

Top View

2500/Tape & Reel

NTMS5838NL/D

Shipping

7.5 A

MAX

Drain

†

Related parts for NTMS5838NLR2G

NTMS5838NLR2G Summary of contents

Page 1

... IAS 260 °C L (*Note: Microdot may be in either location) Symbol Value Unit NTMS5838NLR2G R 83 qJA R 49 qJA †For information on tape and reel specifications, °C/W including part orientation and tape sizes, please R 22 qJF refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES & ...

Page 3

TYPICAL PERFORMANCE CURVES DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.06 0.05 0.04 0.03 0.02 0. ...

Page 4

C 800 iss 600 400 200 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 4.5 ...

Page 5

TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 6

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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