IRF3610STRLPBF International Rectifier, IRF3610STRLPBF Datasheet

MOSFET N-CH 100V 103A D2PAK

IRF3610STRLPBF

Manufacturer Part Number
IRF3610STRLPBF
Description
MOSFET N-CH 100V 103A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3610STRLPBF

Input Capacitance (ciss) @ Vds
5380pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.6 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
103A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Power - Max
333W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
103A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9.3mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF3610STRLPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3610STRLPBF
Manufacturer:
IR
Quantity:
12 930
Part Number:
IRF3610STRLPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRF3610STRLPBF
Quantity:
800
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
E
I
E
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Parameter
Parameter
jk
Ù
f
GS
GS
@ 10V
@ 10V
i
G
Gate
G
D
S
IRF3610SPbF
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
300 (1.6mm from case)
V
R
I
D
D
IRF3610SPbF
DSS
DS(on)
-55 to + 175
D
Drain
Max.
HEXFET Power MOSFET
2
103
410
333
± 20
460
Pak
2.2
D
73
23
G
typ.
max.
S
Max.
0.50
40
Source
11.6m Ω
9.3mΩ
103A
100V
S
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
02/18/11
1

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IRF3610STRLPBF Summary of contents

Page 1

Applications High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Benefits Improved Gate, Avalanche and Dynamic dV/dt l Ruggedness Fully Characterized Capacitance and Avalanche l SOA ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Internal Gate ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° ...

Page 4

175°C 100 25° 1.0 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 120 100 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 100 0.05 10 0.10 1 0.1 1.0E-06 500 TOP Single Pulse ...

Page 6

250μA 2 1.0mA 1.0A 2.0 1.5 -100 - Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...

Page 8

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Page 9

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD ...

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