IRFH8334TR2PBF International Rectifier, IRFH8334TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH8334TR2PBF
• Description: MOSFET N-CH 30V 12A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8334TR2PBF

• Input Capacitance (ciss) @ Vds: 1180pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Power - Max: 3.2W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 30 W
• Gate Charge Qg: 7.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8334TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
30
25
20
15
10
Fig 15a. Switching Time Test Circuit
5
0
R G
20V
V DS
V GS, Gate -to -Source Voltage (V)
t p
5
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
10
T J = 25°C
T J = 125°C
15V
DRIVER
15
I D = 20A
+
-
+
-
V DD
A
20
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
160
140
120
100
90%
V
80
60
40
20
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
IRFH8334PbF
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 20A
t
f
125
I D
3.7A
8.2A
150
5