IRFH8325TRPBF International Rectifier, IRFH8325TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH8325TRPBF
• Description: MOSFET N-CH 30V 82A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8325TRPBF

• Input Capacitance (ciss) @ Vds: 2487pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Power - Max: 3.6W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 82 A
• Power Dissipation: 54 W
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8325TRPBFTR

IRFH8325PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
100
1.0
10
75
50
25
0.001
Fig 9. Maximum Drain Current vs.
0
0.01
0.2
0.1
25
10
1
1E-006
Case (Bottom) Temperature
T J = 150°C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
50
D = 0.50
T C , Case Temperature (°C)
0.6
0.10
0.20
0.05
0.02
0.01
0.8
75
T J = 25°C
Limited By Source
Bonding Technology
1.0
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
100
1.2
V GS = 0V
1.4
125
1.6
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.8
0.001
Fig 8. Maximum Safe Operating Area
1000
100
Fig 10. Threshold Voltage vs. Temperature
0.1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
1
0.10
-75 -50 -25
Tc = 25°C
Tj = 150°C
Single Pulse
Limited by
Source Bonding
Technology
I D = 50μA
I D = 250μA
I D = 1.0mA
I D = 1.0A
OPERATION IN THIS AREA LIMITED BY RDS(on)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
0.01
1
0
25
DC
50
100μsec
10msec
10
75 100 125 150
1msec
www.irf.com
0.1
100