IRFH8337TR2PBF International Rectifier, IRFH8337TR2PBF Datasheet - Page 2

• Manufacturer Part Number: IRFH8337TR2PBF
• Description: MOSFET N-CH 30V 9.7A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8337TR2PBF

• Input Capacitance (ciss) @ Vds: 790pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.8 mOhm @ 16.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 3.2W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 18.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 27 W
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8337TR2PBFTR

IRFH8337PbF
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
R
R
R
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
g
sw
oss
rr
θJC
θJC
θJA
θJA
Q
Q
Q
Q
GS(th)
2
DSS
gs1
gs2
gd
godr
DSS
(Bottom)
(Top)
(<10s)
/ΔT
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
Parameter
gs2
Parameter
™
+ Q
gd
)
g
g
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
31
0.025
Typ.
Typ.
10.3
15.8
–––
-6.0
–––
–––
–––
–––
–––
790
180
–––
–––
–––
1.8
4.7
1.6
0.7
1.4
1.0
2.1
4.2
1.6
6.4
5.7
4.1
10
12
69
12
17
Max. Units
Max. Units
12.8
19.9
2.35
-100
Typ.
16.2
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.0
65
18
26
mV/°C
V/°C
mΩ
μA
nA
nC
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
Typ.
–––
–––
–––
–––
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 390 A/μs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
GS
DS
J
J
G
= 16.2A
= 16.2A
=1.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 10V, I
= 10V, V
= 15V
= 4.5V
= 16V, V
= 15V, V
= 0V
= 10V
GS
, I
Max.
16.2
D
28
D
S
F
D
D
= 250μA
D
Conditions
GS
GS
DS
GS
GS
Conditions
Max.
= 25μA
= 16.2A, V
= 16.2A, V
= 16.2A
= 16.2A
4.7
= 13A
40
39
26
= 0V
= 0V, T
= 15V, I
= 0V
= 4.5V
eÃ
D
e
= 1.0mA
www.irf.com
e
J
D
DD
GS
= 125°C
= 16.2A
G
= 15V
= 0V
Units
°C/W
Units
mJ
A
e
D
S