IRLHS2242TR2PBF International Rectifier, IRLHS2242TR2PBF Datasheet - Page 8
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IRLHS2242TR2PBF
Manufacturer Part Number
IRLHS2242TR2PBF
Description
MOSFET P-CH 30V 5.8A 2X2 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLHS2242TRPBF.pdf
(9 pages)
Specifications of IRLHS2242TR2PBF
Input Capacitance (ciss) @ Vds
877pF @ 10V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 8.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
1.1V @ 10µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
2.1W
Mounting Type
*
Package / Case
*
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
31 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 15 A
Power Dissipation
9.6 W
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLHS2242TR2PBFTR
IRLHS2242TR/TR2PbF
PQFN 2x2 Outline Tape and Reel
Table 2:
(WIDTH)
5.4 mm
9.5 mm
COVER
TAPE
8
Width
TOLERANCE
+/- 0.1 mm
+/- 0.1 mm
CORE
Remark:
- Dimension above are typical dimensions.
- Cover tape thickness is 0.048mm +/- 0.005mm.
- Surface resistivity 10E5 < Rs <10E9.
TAPE
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