IRLML2246TRPBF International Rectifier, IRLML2246TRPBF Datasheet

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IRLML2246TRPBF

Manufacturer Part Number
IRLML2246TRPBF
Description
MOSFET P-CH 20V 2.6A SOT23
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLML2246TRPBF

Input Capacitance (ciss) @ Vds
220pF @ 16V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1.1V @ 10µA
Gate Charge (qg) @ Vgs
2.9nc @ 4.5V
Power - Max
1.3W
Mounting Type
*
Package / Case
*
Transistor Polarity
P Channel
Continuous Drain Current Id
-2.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
0.09ohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
135 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 2.6 A
Power Dissipation
1.3 W
Mounting Style
SMD/SMT
Gate Charge Qg
2.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML2246TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML2246TRPBF
Manufacturer:
INFINEON
Quantity:
36 000
Part Number:
IRLML2246TRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IRLML2246TRPBF
0
Company:
Part Number:
IRLML2246TRPBF
Quantity:
15 000
Application(s)
• System/Load Switch
www.irf.com
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through
Features and Benefits
V
I
I
I
P
P
V
T
R
R
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J,
DS
D
D
GS
θJA
θJA
@ T
@ T
T
@T
@T
(@V
(@V
STG
R
R
Symbol
Symbol
A
A
A
A
V
DS(on) max
DS(on) max
= 25°C
= 70°C
= 25°C
= 70°C
GS
GS
GS Max
V
DS
= -4.5V)
= -2.5V)
are on page 10
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient (t<10s)
±12
135
236
-20
Parameter
Parameter
mΩ
mΩ
V
V
GS
GS
f
@ -10V
@ -10V
* 
IRLML2246TRPbF

results in Easier manufacturing
Typ.
–––
–––
HEXFET Power MOSFET
-55 to + 150

Max.
'
0.80
0.01
-2.6
-2.1
± 12
-20
-11
1.3
Benefits
Multi-vendor compatibility
Environmentally friendly
Increased reliability
Micro3
IRLML2246TRPbF
Max.
100
99
TM
(SOT-23)
PD - 97630
Units
Units
W/°C
°C/W
°C
01/24/11
W
V
A
V
1

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IRLML2246TRPBF Summary of contents

Page 1

... IRLML2246TRPbF mΩ  mΩ results in Easier manufacturing Parameter @ -10V GS @ -10V GS Parameter Typ 97630 HEXFET Power MOSFET  ' TM Micro3 (SOT-23) IRLML2246TRPbF Benefits Multi-vendor compatibility ⇒ Environmentally friendly Increased reliability Max. Units V -20 -2.6 -2.1 A -11 1.3 W 0.80 0.01 W/°C ± - 150 °C Max. ...

Page 2

... IRLML2246TRPbF Electric Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I DSS Drain-to-Source Leakage Current I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance G gfs Forward Transconductance ...

Page 3

... DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° -15V ≤ 60µs PULSE WIDTH 0.1 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRLML2246TRPbF 100 VGS TOP -10V -4.5V -3.0V -2.5V -2.3V -2.0V 10 -1.8V BOTTOM -1.5V 1 0.1 0.1 ...

Page 4

... IRLML2246TRPbF 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 150°C 1 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14 -2.6A 12.0 10.0 8.0 6.0 4.0 2 ...

Page 5

... D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com IRLML2246TRPbF Fig 10a. Switching Time Test Circuit V GS 10% 125 150 90 Fig 10b. Switching Time Waveforms 0.0001 0.001 0.01 ...

Page 6

... IRLML2246TRPbF 300 250 200 150 100 25° GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage Id Vgs Qgodr Qgd Fig 14a. Basic Gate Charge Waveform 6 1200 -2.6A 1000 800 600 400 125°C 200 Fig 13. Typical On-Resistance vs. Vds 0 1K 20K Vgs(th) Qgs1 Qgs2 Fig 14b ...

Page 7

... -10µ -250µA 0.4 0.2 0.0 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage vs. Junction Temperature www.irf.com IRLML2246TRPbF 1000 800 600 400 200 0 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Typical Power vs. Time 7 ...

Page 8

... IRLML2246TRPbF 0.15 [0.006 Micro3 (SOT-23/TO-236AB) Part Marking Information 0.10 [0.004 0.20 [0.008 NOTES: Recommended Footprint 0.972 0.950 2.742 0.802 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. ...

Page 9

... TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com IRLML2246TRPbF 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 4.1 ( .161 ) 1.65 ( .065 ) 3.9 ( .154 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 1.1 ( .043 ) 3.9 ( .154 ) ...

Page 10

... IRLML2246TRPbF Orderable part number Package Type IRLML2246TRPbF Micro3 (SOT-23) † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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