MMBV432LT1G ON Semiconductor, MMBV432LT1G Datasheet
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MMBV432LT1G
Specifications of MMBV432LT1G
MMBV432LT1GOS
MMBV432LT1GOSTR
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MMBV432LT1G Summary of contents
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... P 225 mW D 1.8 mW/°C °C T +125 J °C T −55 to +125 stg MMBV432LT1 MMBV432LT1G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com DUAL VOLTAGE VARIABLE CAPACITANCE DIODE SOT−23 (TO−236) CASE 318 ...
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ELECTRICAL CHARACTERISTICS (EACH DIODE) (T Characteristic Reverse Breakdown Voltage = 10 mAdc Reverse Voltage Leakage Current (V = 9.0 Vdc) R Diode Capacitance (V = 2.0 Vdc 1.0 MHz) R Capacitance Ratio C2/ 1.0 ...
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TYPICAL CHARACTERISTICS (Each Diode) 100 1.0 MHz T = 25° REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 2000 1000 500 200 100 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...