MV2109G ON Semiconductor, MV2109G Datasheet - Page 4

• Manufacturer Part Number: MV2109G
• Description: DIODE TUNING 30V 200MA TO92-2
• Manufacturer: ON Semiconductor

Specifications of MV2109G

• Capacitance @ Vr, F: 36.3pF @ 4V, 1MHz
• Capacitance Ratio: 3.2
• Capacitance Ratio Condition: C2/C30
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 200 @ 4V, 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-2, TO-226AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MV2109GOS

A
A1
E
1
3
D
e
2
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
VIEW C
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
L1
L
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
q
0.25
c
4
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 8:
0.079
DIM
A1
H
2.0
PIN 1. ANODE
L1
A
b
D
E
c
e
L
E
inches
mm
2. NO CONNECTION
3. CATHODE
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
0.040
0.002
0.018
0.005
0.051
0.075
0.008
0.021
0.094
NOM
0.114
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX