MMBV609LT1 ON Semiconductor, MMBV609LT1 Datasheet

MMBV609LT1

Manufacturer Part Number

MMBV609LT1

Description

DIODE TUNING SS 20V SOT23

Manufacturer

ON Semiconductor

Datasheet

1.MMBV609LT1G.pdf (3 pages)

Specifications of MMBV609LT1

Capacitance @ Vr, F

32pF @ 3V, 1MHz

Capacitance Ratio

2.4

Capacitance Ratio Condition

C3/C8

Voltage - Peak Reverse (max)

20V

Diode Type

1 Pair Common Cathode

Q @ Vr, F

450 @ 3V, 50MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MMBV609LT1OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBV609LT1G

Manufacturer:

NXP

Quantity:

560

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBV609LT1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 3
Download datasheet (115Kb)

MMBV609LT1G

Silicon Tuning Diode

and tuning, or any top−of−the−line application requiring

back−to−back diode configuration for minimum signal distortion and

detuning. This device is supplied in the SOT−23 plastic package for

high volume, pick and place assembly requirements.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

August, 2009 − Rev. 4

MAXIMUM RATINGS

Reverse Voltage

Forward Current

Total Power Dissipation @ T

Derate above 25°C

Junction Temperature

Storage Temperature Range

This device is designed for FM tuning, general frequency control

Compliant

High Figure of Merit − Q = 450 (Typ) @ V

Guaranteed Capacitance Range

Dual Diodes − Save Space and Reduce Cost

Surface Mount Package

Available in 8 mm Tape and Reel

Monolithic Chip Provides Improved Matching

Hyper Abrupt Junction Process Provides High Tuning Ratio

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Rating

(EACH DIODE)

= 25°C

Symbol

stg

−55 to +125

= 3.0 Vdc, f = 50 MHz

Value

+125

100

225

1.8

mW/°C

mAdc

Unit

Vdc

°C

†For information on tape and reel specifications,

MMBV609LT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

Device

DUAL VOLTAGE VARIABLE

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

CAPACITANCE DIODE

ORDERING INFORMATION

5L = Specific Device Code

M = Date Code*

MARKING DIAGRAM

http://onsemi.com

= Pb−Free Package

(Pb−Free)

Package

SOT−23

5L M G

Publication Order Number:

SOT−23 (TO−236)

CASE 318

STYLE 9

3,000 / Tape & Reel

MMBV609LT1/D

Shipping

†

Related parts for MMBV609LT1

MMBV609LT1 Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping MMBV609LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBV609LT1/D † ...

Page 2

ELECTRICAL CHARACTERISTICS (EACH DIODE) (T Characteristic Reverse Breakdown Voltage ( mAdc) R Reverse Voltage Leakage Current ( Vdc) R Diode Capacitance (V = 3.0 Vdc 1.0 MHz) R Capacitance Ratio C3/ 1.0 ...

Page 3

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBV609LT1/D ...

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