MMBV432LT1 ON Semiconductor, MMBV432LT1 Datasheet
MMBV432LT1
Manufacturer Part Number
MMBV432LT1
Description
DIODE TUNING SS 14V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBV432LT1.pdf
(4 pages)
Specifications of MMBV432LT1
Capacitance @ Vr, F
48.1pF @ 2V, 1MHz
Capacitance Ratio
2
Capacitance Ratio Condition
C2/C8
Voltage - Peak Reverse (max)
14V
Diode Type
1 Pair Common Cathode
Q @ Vr, F
150 @ 2V, 100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBV432LT1OSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBV432LT1
Manufacturer:
ROHM
Quantity:
1 000
Part Number:
MMBV432LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBV432LT1
Silicon Tuning Diode
and tuning, or any top−of−the−line application requiring
back−to−back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT−23 plastic package for
high volume, pick and place assembly requirements.
Features
•
•
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
MAXIMUM RATINGS
Reverse Voltage
Forward Current
Total Power Dissipation @ T
Derate above 25°C
Junction Temperature
Storage Temperature Range
This device is designed for FM tuning, general frequency control
High Figure of Merit − Q = 150 (Typ) @ V
Guaranteed ±1.0% (Max) Over Specified Tuning Range
Guaranteed Capacitance Range
Dual Diodes − Save Space and Reduce Cost
Surface Mount Package
Available in 8 mm Tape and Reel
Monolithic Chip Provides Improved Matching −
Pb−Free Package is Available
Rating
(Each Diode)
A
Preferred Device
= 25°C
Symbol
T
V
P
T
I
stg
F
R
D
J
R
= 2.0 Vdc, f = 100 MHz
−55 to +125
Value
+125
200
225
1.8
14
1
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
†For information on tape and reel specifications,
MMBV432LT1
MMBV432LT1G
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
DUAL VOLTAGE VARIABLE
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
CAPACITANCE DIODE
ORDERING INFORMATION
M4B = Specific Device Code
M
G
MARKING DIAGRAM
1
http://onsemi.com
= Date Code*
= Pb−Free Package
SOT−23 (TO−236)
1
1
(Pb−Free)
Package
CASE 318
SOT−23
SOT−23
STYLE 9
M4B M G
2
Publication Order Number:
G
3
3
3,000 / Tape & Reel
3,000 / Tape & Reel
MMBV432LT1/D
Shipping
2
†
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MMBV432LT1 Summary of contents
Page 1
... ORDERING INFORMATION Device Package Shipping SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBV432LT1/D † ...
Page 2
... DIODE) (T Characteristic Reverse Breakdown Voltage = 10 mAdc Reverse Voltage Leakage Current (V = 9.0 Vdc) R Diode Capacitance (V = 2.0 Vdc 1.0 MHz) R Capacitance Ratio C2/ 1.0 MHz) Figure of Merit (V = 2.0 Vdc 100 MHz) R MMBV432LT1 = 25°C unless otherwise noted) A Symbol Min V 14 (BR)R I − 1 100 http://onsemi.com ...
Page 3
... FREQUENCY (MHz) Figure 3. Figure of Merit versus Frequency 0.5 0.2 0.1 0.05 0.02 0.01 0 Figure 5. Reverse Current versus Reverse Voltage MMBV432LT1 550 450 350 250 150 Figure 2. Figure of Merit versus Voltage 1.06 = 2.0 Vdc 1.04 = 25°C 1.02 1.00 0.98 ...
Page 4
... ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMBV432LT1/D ...