MMBV3102LT1 ON Semiconductor, MMBV3102LT1 Datasheet

MMBV3102LT1

Manufacturer Part Number

MMBV3102LT1

Description

DIODE TUNING SS 30V SOT23

Manufacturer

ON Semiconductor

Datasheet

1.MMBV3102LT1G.pdf (3 pages)

Specifications of MMBV3102LT1

Capacitance @ Vr, F

25pF @ 3V, 1MHz

Capacitance Ratio

4.8

Capacitance Ratio Condition

C3/C25

Voltage - Peak Reverse (max)

30V

Diode Type

Single

Q @ Vr, F

200 @ 3V, 50MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MMBV3102LT1OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBV3102LT1G

Manufacturer:

Quantity:

3 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBV3102LT1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 3
Download datasheet (115Kb)

MMBV3102LT1G

Silicon Tuning Diode

frequency control and tuning applications. It provides solid−state

reliability in replacement of mechanical tuning methods.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

August, 2009 − Rev. 4

MAXIMUM RATINGS

Reverse Voltage

Forward Current

Device Dissipation @ T

Junction Temperature

Storage Temperature Range

This device is designed in the Surface Mount package for general

Compliant

High Q with Guaranteed Minimum Values at VHF Frequencies

Controlled and Uniform Tuning Ratio

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Derate above 25°C

Rating

= 25°C

= 25°C unless otherwise noted)

Symbol

stg

−55 to +150

Value

+125

200

225

1.8

mW/°C

mAdc

Unit

Vdc

°C

†For information on tape and reel specifications,

MMBV3102LT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

Device

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

ORDERING INFORMATION

M4C = Specific Device Code

Cathode

MARKING DIAGRAM

http://onsemi.com

SOT−23 (TO−236)

= Date Code*

= Pb−Free Package

(Pb−Free)

Package

CASE 318

SOT−23

STYLE 8

M4CM G

Publication Order Number:

3,000 / Tape & Reel

Anode

MMBV3102LT1/D

Shipping

†

Related parts for MMBV3102LT1

MMBV3102LT1 Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping MMBV3102LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBV3102LT1/D † ...

Page 2

... ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage ( mAdc) R Reverse Voltage Leakage Current ( Vdc 25° Diode Capacitance Temperature Coefficient (V = 4.0 Vdc 1.0 MHz) R Device MMBV3102LT1 1.0 MHz T = 25°C A 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5 REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 100 ...

Page 3

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBV3102LT1/D ...

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