1SV242(TPH3,F) Toshiba, 1SV242(TPH3,F) Datasheet

1SV242(TPH3,F)

Manufacturer Part Number

1SV242(TPH3,F)

Description

DIODE VARACTOR DUAL 30V SC-59

Manufacturer

Toshiba

Datasheet

1.1SV242TPH3F.pdf (3 pages)

Specifications of 1SV242(TPH3,F)

Capacitance @ Vr, F

3pF @ 28V, 1MHz

Capacitance Ratio

14.5

Capacitance Ratio Condition

C1/C28

Voltage - Peak Reverse (max)

30V

Diode Type

1 Pair Common Cathode

Mounting Type

Surface Mount

Package / Case

SC-59

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Q @ Vr, F

Other names

1SV242(TPH3,F)
1SV242FTR

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TV VHF Wide Band Tuning

High capacitance ratio: C1 V/C28 V = 14.5 (typ.)

•

Absolute Maximum Ratings

Electrical Characteristics

Marking

Low series resistance: r

Excellent C-V characteristics, and small tracking error.

Small package

Reverse voltage

Peak reverse voltage

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Reverse voltage

Reverse current

Capacitance

Capacitance ratio

Series resistance

Note 1: Characteristic between anode 1 and anode 2

Note 2: The manufactured devices are divided into groups so that the capacitance variation in each group is kept

Note 3: Packing

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

below 2.5% in the VR range from 1 V to 28 V.

Devices in each group occupy adjacent cavities of the embossed tape. The number of devices in each

group is a multiple of 12 (except for TPH6/TPH6R and TPH7/TPHR7).

Characteristics

(max)

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

(min)

−

(min)

= 0.65 Ω (typ.)

< = 0.025 (VR = 1~28 V)

(Ta = 25°C)

C1 V/C28 V

(Ta = 25°C)

Symbol

C28 V

C1 V

stg

1SV242

35 (R

= 1 μA

−55~125

= 28 V

= 1 V, f = 1 MHz

= 28 V, f = 1 MHz

= 5 V, f = 470 MHz

Rating

125

= 10 kΩ)

Test Condition

⎯

Unit

°C

(Note 1)

Weight: 0.013 g (typ.)

JEDEC

JEITA

TOSHIBA

2.43

13.4

Min

⎯

Typ.

14.5

0.65

2.7

⎯

1-3G1F

SC-59

2007-11-01

―

Max

3.0

0.8

⎯

1SV242

Unit: mm

Unit

⎯

Related parts for 1SV242(TPH3,F)

1SV242(TPH3,F) Summary of contents

Page 1

... TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type TV VHF Wide Band Tuning High capacitance ratio: C1 V/C28 V = 14.5 (typ.) • Low series resistance 0.65 Ω (typ.) s • Excellent C-V characteristics, and small tracking error. • Small package Absolute Maximum Ratings Characteristics Reverse voltage ...

Page 2

C (Ta) C (25) δ = Note (25) 2 1SV242 × 100 (%) 2007-11-01 ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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