MMBV3102LT1G ON Semiconductor, MMBV3102LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBV3102LT1G
• Description: DIODE TUNING SS 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBV3102LT1G

• Capacitance @ Vr, F: 25pF @ 3V, 1MHz
• Capacitance Ratio: 4.8
• Capacitance Ratio Condition: C3/C25
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 200 @ 3V, 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBV3102LT1GOS

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance Temperature Coefficient
MMBV3102LT1
0.001
0.01
100
1.0
0.1
8.0
4.0
10
(I
(V
(V
40
36
32
28
24
20
16
12
0
R
-60
0.3
R
R
= 10 mAdc)
= 25 Vdc, T
= 4.0 Vdc, f = 1.0 MHz)
0.5
Device
f = 1.0 MHz
T
-20
A
Figure 1. Diode Capacitance
= 25°C
A
Figure 3. Leakage Current
T
V
= 25°C)
1.0
A
R
, AMBIENT TEMPERATURE (°C)
V
, REVERSE VOLTAGE (VOLTS)
0
R
= 20 Vdc
1. C
+20
Characteristic
2.0 3.0
R
is the ratio of C
+60
5.0
(T
Min
A
20
NOTES ON TESTING AND SPECIFICATIONS
= 25°C unless otherwise noted)
V
TYPICAL CHARACTERISTICS
C
R
T
10
t
+100
= 3.0 Vdc, f = 1.0 MHz
, Diode Capacitance
measured at 3.0 Vdc divided by C
http://onsemi.com
Nom
20 30
pF
22
+140
2
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
5.0
3.0
2.0
1.0
0.5
0.3
0.2
20
10
Max
-75
25
0
Symbol
V
T
f = 50 MHz
TC
(BR)R
A
3.0
I
V
R
f = 1.0 MHz
-50
= 25°C
R
C
= 3.0 Vdc
T
Q, Figure of Merit
measured at 25 Vdc.
6.0
Figure 4. Diode Capacitance
V
f = 50 MHz
-25
R
T
V
Figure 2. Figure of Merit
A
= 3.0 Vdc
R
, AMBIENT TEMPERATURE (°C)
9.0
Min
200
, REVERSE VOLTAGE (VOLTS)
Min
30
−
−
0
12
+25
15
Typ
300
−
−
C
18
R
Min
+50
4.5
, Capacitance Ratio
f = 1.0 MHz
21
Max
0.1
C
−
−
+75
3
/C
24
25
+100
ppm/°C
Typ
4.8
27
mAdc
Unit
Vdc
+125
30