BB 555 H7912 Infineon Technologies, BB 555 H7912 Datasheet - Page 2

• Manufacturer Part Number: BB 555 H7912
• Description: DIODE VAR CAP 30V 20MA SCD80
• Manufacturer: Infineon Technologies

Specifications of BB 555 H7912

• Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
• Capacitance Ratio: 9.8
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Mounting Type: Surface Mount
• Package / Case: SCD 80
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Q @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BB555H7912XT

1
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
V
AC Characteristics
Diode capacitance
V
V
V
V
Capacitance ratio
V
Capacitance ratio
V
Capacitance matching
V
BB535
V
BB555/-02V
V
BB555/-02V
Series resistance
V
For details please refer to Application Note 047
R
R
R
R
R
R
R
R
R
R
R
R
= 30 V
= 30 V, T
= 1 V, f = 1 MHz
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
= 28 V, f = 1 MHz
= 1 V, V
= 2 V, V
= 1V to 28V, f = 1 MHz, 7 diodes sequence,
= 1V to 28V, f = 1 MHz, 4 diodes sequence,
= 1V to 28V, f = 1 MHz, 7 diodes sequence,
= 3 V, f = 470 MHz
R
R
A
= 28 V, f = 1 MHz
= 25 V, f = 1 MHz
= 85 °C
1)
A
= 25°C, unless otherwise specified
2
Symbol
I
C
C
C
r
R
S
C
T
T1
T2
T
/ C
/ C
/ C
T28
T25
T
14.01
min.
17.5
2.05
1.9
8.2
-
-
6
-
-
-
-
Values
18.7
2.24
0.15
0.25
0.58
typ.
BB535/BB555...
8.9
6.7
2.1
15
-
-
-
max.
200
16.1
0.75
2007-04-20
10
9.8
7.5
2.5
2.4
2.3
20
1
2
Unit
nA
pF
-
%