HVC358BTRF-E Renesas Electronics America, HVC358BTRF-E Datasheet
HVC358BTRF-E
Specifications of HVC358BTRF-E
Related parts for HVC358BTRF-E
HVC358BTRF-E Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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HVC358B Variable Capacitance Diode for VCO Features • High capacitance ratio 2.2 min) • Low series resistance. (rs = 0.4 Ω max) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design. ...
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HVC358B Absolute Maximum Ratings (Ta = 25°C) Item Symbol Reverse voltage V R Junction temperature Tj Storage temperature Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min Reverse current I — — R2 Capacitance C 19 ...
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HVC358B Main Characteristic –6 10 –7 10 –8 10 –9 10 –10 10 –11 10 –12 10 – Reverse voltage V R Fig.1 Reverse current vs. Reverse voltage 0 470MHz 0.3 0.2 0.1 ...
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HVC358B Package Dimensions 1.6 ± 0.10 Rev.1.00, Sep.17.2003, page 1.2 ± 0.10 Package Code JEDEC JEITA Mass (reference value January, 2003 Unit: mm UFP — Conforms 0.0016 g ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...