1SV287(TPH3,F) Toshiba, 1SV287(TPH3,F) Datasheet
1SV287(TPH3,F)
Manufacturer Part Number
1SV287(TPH3,F)
Description
DIODE VARACTOR 30V 1-1E1A
Manufacturer
Toshiba
Datasheet
1.1SV287TPH3F.pdf
(3 pages)
Specifications of 1SV287(TPH3,F)
Capacitance @ Vr, F
0.68pF @ 25V, 1MHz
Capacitance Ratio
7.3
Capacitance Ratio Condition
C2/C25
Voltage - Peak Reverse (max)
30V
Diode Type
Single
Mounting Type
Surface Mount
Package / Case
1-1E1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
Other names
1SV287(TPH3,F)
1SV287FTR
1SV287FTR
UHF SHF Tuning
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C
Low series resistance: r
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Note: Available in matched group for capacitance to 6%.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
(V
C
R
(max)
Characteristics
Characteristics
= 2~25 V)
C
(min)
−
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
C
(min)
s
= 1.9 Ω (typ.)
2 V
< = 0.06
/C
25 V
(Ta = 25°C)
= 7.6 (typ.)
(Ta = 25°C)
C
2 V
Symbol
Symbol
C
V
C
T
V
V
25 V
I
T
/C
r
RM
2 V
stg
R
s
R
R
j
25 V
1SV287
35 (R
I
V
V
V
V
R
R
R
R
R
= 1 μA
−55~125
= 28 V
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
= 1 V, f = 470 MHz
Rating
L
125
30
= 10 kΩ)
1
Test Condition
⎯
Unit
°C
°C
V
V
Weight: 0.004 g (typ.)
JEDEC
JEITA
TOSHIBA
0.53
Min
4.2
7.3
30
⎯
⎯
Typ.
7.7
1.9
⎯
⎯
⎯
⎯
1-1E1A
2007-11-01
―
―
0.68
Max
5.7
2.3
10
⎯
⎯
1SV287
Unit: mm
Unit
nA
pF
pF
⎯
Ω
V
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1SV287(TPH3,F) Summary of contents
Page 1
... TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type UHF SHF Tuning • High capacitance ratio • Low series resistance 1.9 Ω (typ.) s • Excellent C-V characteristics, and small tracking error. • Useful for small size tuner. Absolute Maximum Ratings Characteristics Reverse voltage ...
Page 2
C – 10 MHz Ta = 25°C 5.0 3.0 2.0 1.0 0.5 0 Reverse voltage V ( – 2 MHz Ta ...
Page 3
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...