MAC08BT1 ON Semiconductor, MAC08BT1 Datasheet - Page 5

• Manufacturer Part Number: MAC08BT1
• Description: THYRISTOR TRIAC .8A 200V SOT223
• Manufacturer: ON Semiconductor

Specifications of MAC08BT1

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 5mA
• Voltage - Off State: 200V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A @ 60Hz
• Current - On State (it (rms)) (max): 800mA
• Voltage - Gate Trigger (vgt) (max): 2V
• Package / Case: TO-261-4, TO-261AA
• Current - On State (it (rms) (max): 800mA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MAC08BT1OSCT

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
10
0
1.0
0
I
Current Crossing Rate and Junction Temperature
TM
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)
Figure 11. Typical Commutating dv/dt versus
di/dt
I
ADJUST FOR
TM
t
V
w
0.1
, 60 Hz V
DRM
c
, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
200 V
dc
I
CHARGE
T(RMS)
= 180
RMS
0.2
f =
AC
Figure 8. Power Dissipation
CONDUCTION
ANGLE
, RMS ON-STATE CURRENT (AMPS)
2 t
1
w
120
110
TRIGGER
0.3
Note: Component values are for verification of rated (dv/dt)
(di dt) c +
80
0.4
6f I TM
1000
CONTROL
NON-POLAR
CHARGE
100
0.5
90
C
0.6
60
L
MAC08BT1, MAC08MT1
60
http://onsemi.com
0.7
30
0.8
10
5
L
1N914
L
0.01
1.0
1.0
0.1
10
c
0.0001
. See AN1048 for additional information.
60
MEASURE
51 W
I
Figure 12. Typical Commutating dv/dt versus
V
Mounted on Figure 1 Printed Circuit Board
MT2
DRM
G
Junction Temperature at 0.8 Amps RMS
0.001
Figure 9. Thermal Response, Device
= 200 V
70
MT1
C
S
R
S
T
400 Hz
J
, JUNCTION TEMPERATURE ( C)
0.01
ADJUST FOR
dv/dt
t, TIME (SECONDS)
80
(c)
1N4007
300 Hz
0.1
−
+
90
1.0
200 V
100
10
c
60 Hz
180 Hz
110
100