ACST4-7SH STMicroelectronics, ACST4-7SH Datasheet - Page 5
![IC AC POWER SWITCH](/photos/5/24/52409/i-pak_sml.jpg)
ACST4-7SH
Manufacturer Part Number
ACST4-7SH
Description
IC AC POWER SWITCH
Manufacturer
STMicroelectronics
Datasheet
1.ACST4-7CH.pdf
(13 pages)
Specifications of ACST4-7SH
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
35mA
Voltage - Off State
700V
Current - Gate Trigger (igt) (max)
25mA
Current - Non Rep. Surge 50, 60hz (itsm)
30A, 33A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.1V
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Current - On State (it (rms) (max)
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ASCT4
Figure 10. On-state characteristics
Figure 12. Relative variation of static dV/dt
Figure 14. Relative variation of the clamping
100
6
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
10
25
1
dV/dt [T j ] / dV/dt [T j = 125 °C]
-50
0
I TM (A)
V [T j ] / V [T j = 25 °C]
R d = 110 m
V to = 0.90 V
CL
T j = 125 °C
T j max:
-25
CL
(maximum values)
immunity versus junction
temperature (gate open)
voltage (V
temperature (minimum values)
1
50
T j = 25 °C
0
2
25
CL
75
) versus junction
50
3
75
100
V D = V R = 536 V
4
100
Doc ID 8766 Rev 5
V TM (V)
T j (°C)
T j (°C)
125
125
5
Figure 11. Relative variation of critical rate of
Figure 13. Relative variation of leakage
Figure 15. Thermal resistance junction to
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
25
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
(dI/dt) c [T j ] / (dl/dt) c [T j = 125 °C]
0
I DRM /I RRM [T j ; V DRM / V RRM ] / I DRM /I RRM [T j = 125 °C; 800 V]
25
Different blocking voltages
5
decrease of main current (dI/dt)
versus junction temperature
current versus junction
temperature
ambient versus copper surface
under tab
50
10
V DRM = V RRM = 600 V
50
Printed circuit board FR4,
copper thickness = 35 µm
15
S
CU
75
20
(cm²)
V DRM = V RRM = 800V
75
V DRM = V RRM = 200 V
25
Characteristics
100
100
30
T j (°C)
DPAK
35
T j (°C)
125
c
125
5/13
40