T2800DG ON Semiconductor, T2800DG Datasheet
T2800DG
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T2800DG Summary of contents
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... A GM °C T −40 to +125 J °C T −40 to +150 stg T2800D T2800DG 1 http://onsemi.com TRIACS MT2 MT1 G MARKING DIAGRAM 4 T2800DG TO−220AB AYWW CASE 221A STYLE Assembly Location Y = Year WW = Work Week G = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ...
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... Gate Unenergized 80°C) C Critical Rate-of-Rise of Off-State Voltage (V = Rated V , Exponential Voltage Rise, Gate Open DRM 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V ...
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Quadrant II (−) I GATE I − GT Quadrant III (−) I GATE All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 100 95 FULL CYCLE SINUSOIDAL WAVEFORM 90 85 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...