BTB08-800CW3G ON Semiconductor, BTB08-800CW3G Datasheet - Page 5

• Manufacturer Part Number: BTB08-800CW3G
• Description: TRIAC 8A 35MA 800V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of BTB08-800CW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 45mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 90A @ 60Hz
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 8A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
1
-40 -25 -10
Figure 6. Typical Gate Trigger Current Variation
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
I
TM
ADJUST FOR
Q2
, 60 Hz V
200 V
T
J
, JUNCTION TEMPERATURE ( C)
CHARGE
RMS
AC
5
20
TRIGGER
Note: Component values are for verification of rated (di/dt)
35
50
5000
4K
3K
2K
1K
0
10
BTB08-600CW3G, BTB08-800CW3G
CONTROL
65
NON‐POLAR
CHARGE
Figure 8. Critical Rate of Rise of Off‐State Voltage
Q1
80
R
G
C
V
R
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Q3
L
D
L
95
= 30 W
= 12 V
110
(Exponential Waveform)
http://onsemi.com
100
125
5
L
1N914
L
c
1.8
1.6
1.4
1.2
0.8
0.6
0.4
. See AN1048 for additional information.
MEASURE
1
-40 -25 -10
51 W
Figure 7. Typical Gate Trigger Voltage Variation
1000
I
MT2
G
V
T
J
D
= 125 C
MT1
= 800 Vpk
T
J
, JUNCTION TEMPERATURE ( C)
Q2
5
10000
20
1N4007
35
Q1
Q3
50
-
+
65
200 V
80
V
R
D
L
95
= 30 W
c
= 12 V
110
125