ACST830-8FP STMicroelectronics, ACST830-8FP Datasheet - Page 5

• Manufacturer Part Number: ACST830-8FP
• Description: TRIAC 8A 800V 30MA TO-220FPAB
• Manufacturer: STMicroelectronics
• Series: ACS™/A.S.D®r

Specifications of ACST830-8FP

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 30mA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A, 84A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220FP
• Current - On State (it (rms) (max): 8A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ACST8
Figure 10. On-state characteristics
Figure 12. Relative variation of static dV/dt
Figure 14. Relative variation of clamping
100
1.15
1.10
1.05
1.00
0.95
0.90
0.85
11
10
10
9
8
7
6
5
4
3
2
1
0
1
25
dV/dt[T ] /
-50
0
T
j
=125 °C
j
-25
(maximum values)
immunity versus junction
temperature (gate open)
voltage (V
temperature (minimum values)
dV/dt[T =125°C]
1
50
T
0
j
=25 °C
j
T
2
j
25
(°C)
CL
75
) versus junction
V
T
TM
j
(°C)
50
(V)
3
75
100
V
4
D
=V
V
R
100
to
d
T
R
j
= 50 m
=530 V
= 0.90 V
max :
Doc ID 7463 Rev 9
125
125
5
Figure 11. Relative variation of critical rate of
Figure 13. Relative variation of leakage
Figure 15. Thermal resistance junction to
80
70
60
50
40
30
20
10
15
14
13
12
11
10
1.0E+00
1.0E-01
1.0E-02
1.0E-03
0
9
8
7
6
5
4
3
2
1
0
(dI/dt)c[T ] /
25
0
25
5
Different blocking voltages
j
decrease of main current (dI/dt)
versus junction temperature
current versus junction
temperature
ambient versus copper surface
under tab
(dI/dt)c[T =125°C]
Printed circuit board FR4,
copper thickness = 35 µm
50
10
V
DRM
50
=V
j
RRM
15
T
=600 V
j
(°C)
S
CU
75
20
(cm²)
75
V
V
DRM
DRM
=V
=V
25
RRM
RRM
8
=800 V
=800 V
V
T
DRM
j
Characteristics
(°C)
100
30
100
=V
RRM
=200 V
D²PAK
35
125
c
125
40
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