ACST610-8R STMicroelectronics, ACST610-8R Datasheet - Page 5

• Manufacturer Part Number: ACST610-8R
• Description: TRIAC 6A 800V 10MA I2PAK
• Manufacturer: STMicroelectronics
• Series: ACS™/A.S.D®r

Specifications of ACST610-8R

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 45A, 47A
• Current - On State (it (rms)) (max): 6A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-262-3, Short Leads, I²Pak
• Current - On State (it (rms) (max): 6A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ACST6
Figure 10. On-state characteristics
Figure 12. Relative variation of static dV/dt
Figure 14. Relative variation of clamping
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
6
5
4
3
2
1
0
10
-50
25
1
V [T j ] / V [T j = 25 °C]
dV/dt [T j ] / dV/dt [T j = 125 °C]
0
CL
I TM (A)
T j = 125 °C
-25
CL
(maximum values)
immunity versus junction
temperature (gate open)
voltage (V
temperature (minimum values)
1
50
0
T j = 25 °C
25
2
CL
75
) versus junction
50
3
75
V D = V R = 536 V
100
V to = 0.90 V
R d = 80 m
4
100
T j max:
Doc ID 7297 Rev 10
V TM (V)
T j (°C)
T j (°C)
125
125
5
Figure 11. Relative variation of critical rate of
Figure 13. Relative variation of leakage
Figure 15. Thermal resistance junction to
80
70
60
50
40
30
20
10
0
8
7
6
5
4
3
2
1
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25
0
(dl/dt) c [T j ] / (dl/dt) c [T j = 125 °C]
I DRM /I RRM [T j ; V DRM / V RRM ] / I DRM /I RRM [T j = 125 °C; 800 V]
25
5
Different blocking voltages
decrease of main current (dI/dt)
versus junction temperature
current versus junction
temperature
ambient versus copper surface
under tab
50
10
V DRM = V RRM = 600 V
Printed circuit board FR4,
copper thickness = 35 µm
50
15
S
T j (°C)
CU
V DRM = V RRM = 800V
75
(cm²)
20
75
V DRM = V RRM = 200 V
25
Characteristics
100
100
30
D²PAK
35
T j (°C)
125
c
125
5/15
40